NXP Semiconductors
PMCXB1000UE
30 V, complementary N/P-channel Trench MOSFET
PMCXB1000UE All information provided in this document is subject to legal disclaimers.
©
NXP Semiconductors N.V. 2016. All rights reserved
Product data sheet 27 June 2016 3 / 20
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
TR1 (N-channel)
V
DS
drain-source voltage - 30 V
V
GS
gate-source voltage
T
j
= 25 °C
-8 8 V
V
GS
= 4.5 V; T
amb
= 25 °C [1] - 590 mAI
D
drain current
V
GS
= 4.5 V; T
amb
= 100 °C [1] - 370 mA
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - 2.3 A
[2] - 285 mWT
amb
= 25 °C
[1] - 410 mW
P
tot
total power dissipation
T
sp
= 25 °C - 4 W
TR2 (P-channel)
V
DS
drain-source voltage - -30 V
V
GS
gate-source voltage
T
j
= 25 °C
-8 8 V
V
GS
= -4.5 V; T
amb
= 25 °C [1] - -410 mAI
D
drain current
V
GS
= -4.5 V; T
amb
= 100 °C [1] - -260 mA
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - -1.7 A
[2] - 285 mWT
amb
= 25 °C
[1] - 410 mW
P
tot
total power dissipation
T
sp
= 25 °C - 4 W
Per device
T
j
junction temperature -55 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
TR1 (N-channel), Source-drain diode
I
S
source current T
amb
= 25 °C [1] - 380 mA
TR2 (P-channel), Source-drain diode
I
S
source current T
amb
= 25 °C [1] - -410 mA
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
