January 2007 Rev 6 1/18
18
STP/F21NM50N - STW21NM50N
STB21NM50N - STB21NM50N-1
N-channel 500V - 0.15 - 18A TO-220/FP/D
2
/I
2
PA K /TO -247
Second generation MDmesh™ Power MOSFET
General features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Description
The devices are realized with the second
generation of MDmesh Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
Switching application
Internal schematic diagram
Type
V
DSS
(@Tjmax)
R
DS(on)
I
D
STB21NM50N
STB21NM50N-1
STF21NM50N
STP21NM50N
STW21NM50N
550V
550V
550V
550V
550V
< 0.19
< 0.19
< 0.19
< 0.19
< 0.19
18A
18A
18A
(1)
18A
18A
1. Limited by wire bonding
TO-220
1
2
3
1
2
3
TO-220FP
1
3
D
2
PAK
1
2
3
I
2
PAK
TO-247
www.st.com
Order codes
Part number Marking Package Packaging
STB21NM50N B21NM50N D
2
PAK Tape & reel
STB21NM50N-1 B21NM50N I
2
PA K Tu be
STF21NM50N F21NM50N TO-220FP Tube
STP21NM50N P21NM50N TO-220 Tube
STW21NM50N W21NM50N TO-247 Tube
Obsolete Product(s) - Obsolete Product(s)
Contents STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
2/18
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Obsolete Product(s) - Obsolete Product(s)
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Electrical ratings
3/18
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220/ D
2
PAK/
I
2
PAK/TO-247
TO-220FP
V
DS
Drain-source voltage (V
GS
= 0) 500 V
V
GS
Gate- source voltage ±25 V
I
D
Drain current (continuous) at T
C
= 25°C 18 18
(1)
1. Limited only by maximum temperature allowed
A
I
D
Drain current (continuous) at T
C
= 100°C 11 11
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 72 72
(1)
A
P
TOT
Total dissipation at T
C
= 25°C 140 30 W
Derating factor 1.12 0.23 W/°C
dv/dt
(3)
3. I
SD
18 A, di/dt 400 A/µs, V
DD
=80% V
(BR)DSS
Peak diode recovery voltage slope 15 V/ns
Viso
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1s;T
C
=25°C)
-- 2500 V
T
stg
Storage temperature
–55 to 150
150
°C
T
j
Max. operating junction temperature
Table 2. Thermal data
Symbol Parameter
TO-220/D²PAK/
I²PAK / TO-247
TO-220FP Unit
Rthj-case Thermal resistance junction-case max 0.89 4.21 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Table 3. Avalanche characteristics
Symbol Parameter Max value Unit
I
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max)
9A
E
AS
Single pulse avalanche energy
(starting T
j
= 25°C, I
D
= I
AR
, V
DD
= 50V)
480 mJ
Obsolete Product(s) - Obsolete Product(s)

STP21NM50N

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 500 V 0.15 Ohm 18 A 2nd Gen MDmesh
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet