Electrical characteristics STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
4/18
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions
Value
Unit
Min. Typ. Max.
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 1mA, V
GS
= 0 500 V
dv/dt
(1)
1. Characteristic value at turn off on inductive load
Drain source voltage slope
V
DD
=400V, I
D
=25A,
V
GS
=10V
44 V/ns
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating,T
C
@125°C
1
10
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20V 100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250µA 2 3 4 V
R
DS(on
Static drain-source on
resistance
V
GS
= 10V, I
D
= 9A 0.150 0.190 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance V
DS
= 15V
,
I
D
= 9A 12 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
1950
420
60
pF
pF
pF
C
oss eq.
(2)
2. C
oss eq
. is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance
V
GS
= 0V, V
DS
= 0V to 400V 270 pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
=250V, I
D
= 9A
R
G
=4.7Ω V
GS
= 10V
(see Figure 15.)
22
18
90
30
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 400V, I
D
= 18A,
V
GS
= 10V,
(see Figure 16.)
65
10
30
nC
nC
nC
R
g
Gate input resistance
f=1MHz Gate DC Bias=0
test signal level=20mV
open drain
1.6 Ω
Obsolete Product(s) - Obsolete Product(s)
