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IRFB52N15DPBF

P1-P3P4-P6P7-P9P10-P11
Notes through are on page 11
www.irf.com 1
09/22/10
HEXFET
®
Power MOSFET
l High frequency DC-DC converters
l Plasma Display Panel
Benefits
Applications
l Low Gate-to-Drain Charge to
Reduce\ Switching Losses
l Fully Characterized Capacitance
Including Effective C
OSS
to Simplify
Design, (See App. Note AN1001)
l Fully Characterized Avalanche
Voltage and Current
l Lead-Free
IRFB52N15DPbF
IRFS52N15DPbF
IRFSL52N15DPbF
D
2
Pak
IRFS52N15DPbF
TO-220AB
IRFB52N15DPbF
TO-262
IRFSL52N15DPbF
* R
θJC
(end of life) for D
2
Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.47*
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
R
θJA
Junction-to-Ambient ––– 40
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 51*
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 36* A
I
DM
Pulsed Drain Current 240
P
D
@T
A
= 25°C Power Dissipation 3.8 W
P
D
@T
C
= 25°C Power Dissipation 230*
Linear Derating Factor 1.5* W/°C
V
GS
Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
V
DS
150 V
V
DS (Avalanche)
min.
200 V
R
DS(ON)
max @ 10V
32
m
T
J
max
175 °C
Key Parameters
PD - 97002A
2 www.irf.com
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
Parameter Min. Typ. Max. Units Conditions
g
fs
Forward Transconductance 19 ––– ––– S V
DS
= 50V, I
D
= 36A
Q
g
Total Gate Charge ––– 60 89 I
D
= 36A
Q
gs
Gate-to-Source Charge ––– 18 27 nC V
DS
= 75V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 28 42 V
GS
= 10V,
t
d(on)
Turn-On Delay Time ––– 16 ––– V
DD
= 75V
t
r
Rise Time ––– 47 ––– I
D
= 36A
t
d(off)
Turn-Off Delay Time ––– 28 ––– R
G
= 2.5Ω
t
f
Fall Time ––– 25 ––– V
GS
= 10V
C
iss
Input Capacitance ––– 2770 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 590 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz
C
oss
Output Capacitance ––– 3940 ––– V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
C
oss
Output Capacitance ––– 260 ––– V
GS
= 0V, V
DS
= 120V, ƒ = 1.0MHz
C
oss
eff. Effective Output Capacitance ––– 550 ––– V
GS
= 0V, V
DS
= 0V to 120V
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) 
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.5 V T
J
= 25°C, I
S
= 36A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 140 210 nS T
J
= 25°C, I
F
= 36A
Q
rr
Reverse RecoveryCharge ––– 780 1170 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
60
240
A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 150 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
––– 0.16 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 32 mΩ V
GS
= 10V, I
D
= 36A
V
GS(th)
Gate Threshold Voltage 3.0 ––– 5.0 V V
DS
= V
GS
, I
D
= 250µA
––– ––– 25
µA
V
DS
= 150V, V
GS
= 0V
––– ––– 250 V
DS
= 120V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 30V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -30V
I
GSS
I
DSS
Drain-to-Source Leakage Current
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
V
DS (Avalanche)
Repetitive Avalanche Voltage
V200 ––– –––
36
–––
–––
450
–––
–––
Max.
470
Min. Typ.
––––––
www.irf.com 3
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
60A
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
5.0V
300µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
5.0V
300µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
5.0 7.0 9.0 11.0 13.0 15.0
V
GS
, Gate-to-Source Voltage (V)
1.00
10.00
100.00
1000.00
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 15V
300µs PULSE WIDTH
P1-P3P4-P6P7-P9P10-P11

IRFB52N15DPBF

Mfr. #:
Buy IRFB52N15DPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 150V 60A 32mOhm 60nC
Lifecycle:
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