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IRFB52N15DPBF
P1-P3
P4-P6
P7-P9
P10-P11
4
www.irf.com
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
1000
V
DS
, Drain-to-
Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crs
s
Ciss
V
GS
= 0V
, f = 1 MH
Z
C
iss
=
C
gs
+ C
gd
, C
ds
S
H
O
R
T
E
D
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0.0
0.5
1.0
1.5
2.0
2.5
V
SD
, S
ource-
toD
rai
n Vol
t
age (V
)
0.10
1.00
10.00
100.00
1000.00
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
1
10
100
1000
V
DS
, Drain-toSour
ce Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION I
N THIS AREA
LIM
I
TED BY R
DS
(on)
100µsec
0
1
02
03
04
05
06
07
0
Q
G
Tot
al
Gate C
harge (
nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 120V
V
DS
= 75V
I
D
= 36A
www.irf.com
5
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(
off)
t
f
Fig 10b.
Switching Time Waveforms
V
DS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
T
, Case T
em
peratur
e
( C)
I ,
Drain Current
(A)
°
C
D
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty facto
r D =
t / t
2. Peak T
=
P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rec
tangular
Puls
e Durati
on (s
ec)
Therm
al Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SING
LE PUL
SE
(THERMAL
RESPONSE)
6
www.irf.com
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T
.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
Type
as
D.U.T
.
Current
Sampling
Resistors
+
-
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.0
1
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
25
50
75
100
125
150
175
0
180
360
540
720
900
Start
ing T
j
, J
unct
ion T
em
peratur
e
( C)
E , S
i
ngle Puls
e Avalanche E
nergy (mJ)
AS
°
I
D
TOP
BO
TTOM
15A
26A
36A
P1-P3
P4-P6
P7-P9
P10-P11
IRFB52N15DPBF
Mfr. #:
Buy IRFB52N15DPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 150V 60A 32mOhm 60nC
Lifecycle:
New from this manufacturer.
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