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SQ1902AEL-T1_GE3

P1-P3P4-P6
Document Number: 65532 www.vishay.com
S11-0156-Rev. C, 14-Feb-11 1
Automotive
Dual N-Channel 20 V (D-S) 175 °C MOSFET
SQ1902EL
Vishay Siliconix
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PRODUCT SUMMARY
V
DS
(V) 20
R
DS(on)
() at V
GS
= 4.5 V 0.415
R
DS(on)
() at V
GS
= 2.5 V 0.600
I
D
(A) 0.78
Configuration Dual
Marking Code
9N XX
Lot Traceability
and Date Code
Part # Code = 9N
YY
SOT-363
SC-70 (6-LEADS)
6
4
1
2
3
5
Top View
S
1
G
1
D
2
D
1
G
2
S
2
D
1
G
1
S
1
N-Channel MOSFET
D
2
G
2
S
2
N-Channel MOSFET
ORDERING INFORMATION
Package SC-70
Lead (Pb)-free and Halogen-free SQ1902EL-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
20
V
Gate-Source Voltage V
GS
± 12
Continuous Drain Current
T
C
= 25 °C
I
D
0.78
A
T
C
= 125 °C 0.45
Continuous Source Current (Diode Conduction) I
S
0.54
Pulsed Drain Current
a
I
DM
3.0
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
0.43
W
T
C
= 125 °C 0.14
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
b
R
thJA
460
°C/W
Junction-to-Foot (Drain) R
thJF
350
www.vishay.com Document Number: 65532
2 S11-0156-Rev. C, 14-Feb-11
SQ1902EL
Vishay Siliconix
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 20 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 0.6 1.0 1.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 12 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 20 V - - 1.0
μA V
GS
= 0 V V
DS
= 20 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 20 V, T
J
= 175 °C - - 150
On-State Drain Current
a
I
D(on)
V
GS
= 4.5 V V
DS
5 V 0.8 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V I
D
= 0.66 A - 0.345 0.415
V
GS
= 4.5 V I
D
= 0.66 A, T
J
= 125 °C - - 0.594
V
GS
= 4.5 V I
D
= 0.66 A, T
J
= 175 °C - - 0.698
V
GS
= 2.5 V I
D
= 0.4 A - 0.482 0.600
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 1 A - 1.1 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 10 V, f = 1 MHz
-6177
pF Output Capacitance C
oss
-2025
Reverse Transfer Capacitance C
rss
-1114
Total Gate Charge
c
Q
g
V
GS
= 4.5 V V
DS
= 10 V, I
D
= 1.2 A
- 0.83 1.25
nC Gate-Source Charge
c
Q
gs
-0.12-
Gate-Drain Charge
c
Q
gd
-0.23-
Turn-On Delay Time
c
t
d(on)
V
DD
= 10 V, R
L
= 20
I
D
0.5 A, V
GEN
= 4.5 V, R
g
= 1
-46
ns
Rise Time
c
t
r
-1015
Turn-Off Delay Time
c
t
d(off)
-69
Fall Time
c
t
f
-69
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
--3.0A
Forward Voltage V
SD
I
F
= 0.5 A, V
GS
= 0 V - 0.85 1.2 V
Document Number: 65532 www.vishay.com
S11-0156-Rev. C, 14-Feb-11 3
SQ1902EL
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0.0
0.2
0.4
0.6
0.8
1.0
012345
V
GS
=5Vthru2V
V
GS
=1.5V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.0
0.5
1.0
1.5
2.0
2.5
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
g
fs
-Transconductance (S)
I
D
-Drain Current (A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
0
20
40
60
80
100
0 5 10 15 20
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
C
rss
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.5 1.0 1.5 2.0 2.5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
0.0
0.3
0.6
0.9
1.2
1.5
0.0 0.2 0.4 0.6 0.8 1.0
R
DS(on)
-On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 2.5 V
V
GS
= 4.5 V
0
1
2
3
4
5
0.0 0.2 0.4 0.6 0.8 1.0
V
GS
- Gate-to-Source Voltage (V)
Q
g
-Total Gate Charge (nC)
I
D
= 1.2 A
V
DS
= 10 V
P1-P3P4-P6

SQ1902AEL-T1_GE3

Mfr. #:
Buy SQ1902AEL-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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