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SQ1902AEL-T1_GE3

P1-P3P4-P6
www.vishay.com Document Number: 65532
4 S11-0156-Rev. C, 14-Feb-11
SQ1902EL
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Source-Drain Diode Forward Voltage
Threshold Voltage
Safe Operating Area
0.7
0.9
1.1
1.3
1.5
1.7
- 50 - 25 0 25 50 75 100 125 150 175
I
D
=0.66A
V
GS
=4.5V
T
J
- Junction Temperature (°C)
(Normalized)
R
DS(on)
- On-Resistance
0.0
0.3
0.6
0.9
1.2
1.5
012345
T
J
=25 °C
T
J
= 150 °C
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
22
23
24
25
26
27
- 50 - 25 0 25 50 75 100 125 150 175
V
DS
-Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
= 1 mA
0.001
0.01
0.1
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
- 0.4
- 0.3
- 0.2
- 0.1
0
0.1
0.2
- 50 - 25 0 25 50 75 100 125 150 175
I
D
= 250 µA
I
D
=5mA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
0.01
0.1
1
10
100
0.01 0.1 1 10 100
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 ms
Limited by R
DS(on)
*
1 ms
I
DM
Limited
T
C
= 25 °C
Single Pulse
BVDSS Limited
10 ms
100 μs
1 s, 10 s, DC
Document Number: 65532 www.vishay.com
S11-0156-Rev. C, 14-Feb-11 5
SQ1902EL
Vishay Siliconix
THERMAL RATINGS (T
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65532
.
10
-3
10
-2
00601110
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 460 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
-3
10
-2
01110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Legal Disclaimer Notice
www.vishay.com
Vishay
Revision: 08-Feb-17
1
Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
P1-P3P4-P6

SQ1902AEL-T1_GE3

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Manufacturer:
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Description:
MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified
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