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IRF6613TRPBF

P1-P3P4-P6P7-P9
www.irf.com 1
7/3/06
Notes through are on page 2
DirectFET ISOMETRIC
MT
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ SX ST MQ MX
MT
Description
The IRF6613PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6613PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6613PbF has been optimized for parameters that are critical in synchronous buck converters including
Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613PbF offers particularly low Rds(on) and high Cdv/dt immunity for
synchronous FET applications.
V
DSS
R
DS(on)
max Qg(typ.)
40V
3.4m
Ω
@V
GS
= 10V
42nC
4.1m
Ω
@V
GS
= 4.5V
PD - 97087A
l RoHS Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
IRF6613PbF
IRF6613TRPbF
DirectFET Power MOSFET
Absolute Maximum Ratin
g
s
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Power Dissipation
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
A
= 70°C
Power Dissipation
W
E
AS
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
Linear Derating Factor
W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θJA
Junction-to-Ambient ––– 45
R
θJA
Junction-to-Ambient 12.5 –––
R
θJA
Junction-to-Ambient 20 ––– °C/W
R
θJC
Junction-to-Case ––– 1.4
R
θJ-PCB
Junction-to-PCB Mounted 1.0 –––
-40 to + 150
0.022
1.8
200
18
89
2.8
Max.
23
18
180
±20
40
150
IRF6613PbF
2 www.irf.com
S
D
G
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 1.2mH, R
G
= 25Ω, I
AS
= 18A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
Surface mounted on 1 in. square Cu board.
Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermal couple mounted to top (Drain) of part.
R
θ
is measured at T
J
of approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 38 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 2.6 3.4
mΩ
––– 3.1 4.1
V
GS(th)
Gate Threshold Voltage 1.35 ––– 2.25 V
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 93 ––– ––– S
Q
g
Total Gate Charge ––– 42 63
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 11.5 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 3.3 ––– nC
Q
gd
Gate-to-Drain Charge ––– 12.6 –––
Q
godr
Gate Charge Overdrive ––– 14.6 ––– See Fig. 6 and 16
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 15.9 –––
Q
oss
Output Charge ––– 22 ––– nC
t
d(on)
Turn-On Delay Time ––– 18 –––
t
r
Rise Time ––– 47 –––
t
d(off)
Turn-Off Delay Time ––– 27 ––– ns
t
f
Fall Time ––– 4.9 –––
C
iss
Input Capacitance ––– 5950 –––
C
oss
Output Capacitance ––– 990 ––– pF
C
rss
Reverse Transfer Capacitance ––– 460 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 110
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 180
(Body Diode)e
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 38 57 ns
Q
rr
Reverse Recovery Charge ––– 42 63 nC
I
D
= 18A
V
GS
= 0V
V
DS
= 15V
I
D
= 18A
T
J
= 25°C, I
F
= 18A
di/dt = 100A/µs g
T
J
= 25°C, I
S
= 18A, V
GS
= 0V g
showing the
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 23A g
V
GS
= 4.5V, I
D
= 18A g
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 32V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
GS
= 4.5V
MOSFET symbol
Clamped Inductive Load
V
DS
= 15V, I
D
= 18A
Conditions
ƒ = 1.0MHz
V
DS
= 16V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5Vg
V
DS
= 20V
IRF6613PbF
www.irf.com 3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 25°C
2.7V
VGS
TOP 10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
BOTTOM 2.7V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 150°C
2.7V
VGS
TOP 10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
BOTTOM 2.7V
1.5 2.0 2.5 3.0 3.5
V
GS
, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
V
DS
= 15V
≤
60µs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 23A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 20406080100
Q
G
Total Gate Charge (nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 32V
VDS= 20V
I
D
= 18A
P1-P3P4-P6P7-P9

IRF6613TRPBF

Mfr. #:
Buy IRF6613TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 40V N-CH HEXFET 3.4mOhms 42nC
Lifecycle:
New from this manufacturer.
Delivery:
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