IRF6613PbF
4 www.irf.com
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
0
30
60
90
120
150
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V
SD
, Source-to-Drain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
0 1 10 100 1000
V
DS
, Drain-toSource Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= τi/Ri
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W) τi (sec)
0.6784 0.00086
17.299 0.57756
17.566 8.94
9.4701 106
τ
A
