NB6L14
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4
Table 5. DC CHARACTERISTICS, MultiLevel Inputs, LVPECL Outputs
V
CC
= 2.375 V to 3.63 V, GND = 0 V, T
A
= 40°C to +85°C
Symbol
Characteristic Min Typ Max Unit
I
CC
Power Supply Current (Inputs and Outputs Open) 35 47 65 mA
LVPECL OUTPUT DC ELECTRICAL CHARACTERISTICS
V
OH
Output HIGH Voltage (Notes 4 and 5) (Q, Q)
V
CC
= 3.3 V
V
CC
= 2.5 V
V
CC
1145
2155
1355
V
CC
1020
2280
1480
V
CC
895
2405
1605
mV
V
OL
Output LOW Voltage (Notes 4 and 5) (Q, Q)
V
CC
= 3.3 V
V
CC
= 2.5 V
V
CC
1945
1355
555
V
CC
1875
1475
675
V
CC
1695
1605
805
mV
DIFFERENTIAL INPUT DRIVEN SINGLEENDED (See Figures 10 and 11)
V
th
Input Threshold Reference Voltage Range (Note 6) 1100 V
CC
100 mV
V
IH
SingleEnded Input High Voltage V
th
+ 100 V
CC
mV
V
IL
SingleEnded Input LOW Voltage GND V
th
100 mV
V
ISE
SingleEnded Input Voltage Amplitude (V
IH
V
IL
) 200 V
CC
GND mV
V
REFAC
V
REFAC
Output Reference Voltage (V
CC
w 2.5 V) V
CC
1.525 V
CC
1.425 V
CC
1.325 mV
DIFFERENTIAL INPUTS DRIVEN DIFFERENTIALLY (See Figures 12 and 13) (Note 7)
V
IHD
Differential Input HIGH Voltage 1200 V
CC
mV
V
ILD
Differential Input LOW Voltage GND V
IHD
100 mV
V
CMR
Input Common Mode Range (Differential Configuration)
(Note 8)
950 V
CC
– 50 mV
V
ID
Differential Input Voltage (ININ) (V
IHD
V
ILD
) 100 V
CC
GND mV
I
IH
Input HIGH Current IN/IN
(VT Open)
150 +150
A
I
IL
Input LOW Current IN/IN
(VT Open)
150 +150
A
LVTTL/LVCMOS INPUT DC ELECTRICAL CHARACTERISTICS
V
IH
Input HIGH Voltage 2.0 V
CC
V
V
IL
Input LOW Voltage GND 0.8 V
I
IH
Input HIGH Current, V
CC
= V
IN
= 3.63 V 10 50
A
I
IL
Input LOW Current, V
CC
= 3.63 V, V
IN
= 0 V 150 0
A
TERMINATION RESISTORS
R
TIN
Internal Input Termination Resistor (IN to VT) 40 50 60
R
DIFF_IN
Differential Input Resistance (IN to IN) 80 100 120
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. LVPECL outputs loaded with 50 to V
CC
2.0 V for proper operation.
5. Input and output parameters vary 1:1 with V
CC
.
6. V
th
is applied to the complementary input when operating in singleended mode.
7. V
IHD
, V
ILD
, V
ID
and V
CMR
parameters must be complied with simultaneously.
8. V
CMR
min varies 1:1 with GND, V
CMR
max varies 1:1 with V
CC
. The V
CMR
range is referenced to the most positive side of the differential
input signal.
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Table 6. AC CHARACTERISTICS V
CC
= 2.375 V to 3.63 V, GND = 0 V, T
A
= 40°C to +85°C (Note 9)
Symbol
Characteristic Min Typ Max Unit
V
OUTPP
Output Voltage Amplitude (@ V
INPPmin
) (Note 10)
f
IN
1.25 GHz
1.25 GHz f
in
2.0 GHz
2.0 GHz f
in
3.0 GHz
550
380
250
700
500
320
mV
f
DATA
Maximum Operating Data Rate 2.5 Gb/s
t
PD
Propagation Delay IN to Q 250 370 500 ps
t
S
SetUp Time (Note 11) EN to IN, IN 300 ps
t
H
Hold Time (Note 11) EN to IN, IN 300 ps
t
SKEW
WithinDevice Skew (Note 12)
Device to Device Skew (Note 13)
5.0 20
150
ps
t
JITTER
RMS Random Jitter (Note 14)
f
IN
= 2.5 GHz
PeaktoPeak Data Dependent Jitter
(Note 15) f
DATA
= 2.5 Gb/s 14
1.0
ps
V
INPP
Input Voltage Swing/Sensitivity
(Differential Configuration) (Note 10)
100 V
CC
GND mV
t
r
,t
f
Output Rise/Fall Times @ Full Output Swing
(20%80%)
70 150 200 ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
9. Measured by forcing V
INPP
(min) from a 50% duty cycle clock source. All loading with an external R
L
= 50 to V
CC
– 2.0 V. Input edge rates
40 ps (20%80%).
10.Input and output voltage swing is a singleended measurement operating in differential mode.
11. Setup and hold times apply to synchronous applications that intend to enable/disable before the next clock cycle. For asynchronous
applications, setup and hold times do not apply.
12.Within device skew is measured between two different outputs under identical power supply, temperature and input conditions.
13.Device to device skew is measured between outputs under identical transition @ 0.5 GHz.
14.Additive RMS jitter with 50% duty cycle clock signal.
15.Additive peaktopeak data dependent jitter with input NRZ data at PRBS 2
^23
1 and K28.5 at 2.5Gb/s.
800
700
600
500
400
300
200
100
0
0123
f
out
, CLOCK OUTPUT FREQUENCY (GHz)
V
OUTPP
OUTPUT VOLTAGE AMPLITUDE (mV)
(TYPICAL)
Figure 4. Output Voltage Amplitude (V
OUTPP
) versus Output
Frequency at Ambient Temperature (Typical)
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Figure 5. Typical Phase Noise Plot at
f
carrier
= 311.04 MHz
Figure 6. Typical Phase Noise Plot at
f
carrier
= 622.08 MHz
Figure 7. Typical Phase Noise Plot at
f
carrier
= 1 GHz
Figure 8. Typical Phase Noise Plot at
f
carrier
= 2 GHz
The above phase noise plots captured using Agilent
E5052A show additive phase noise of the NB6L14 device at
frequencies 311.04 MHz, 622.08 MHz, 1 GHz and 2 GHz
respectively at an operating voltage of 3.3 V in room
temperature. The RMS Phase Jitter contributed by the
device (integrated between 12 kHz and 20 MHz; as shown
in the shaded region of the plot) at each of the frequencies
is 27 fs, 17 fs, 13 fs and 5 fs respectively. The input source
used for the phase noise measurements is Agilent E8663B.

NB6L14MNG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Clock Buffer 1:4 LVPECL FNOUT BUF
Lifecycle:
New from this manufacturer.
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