OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

TSM2537CQ RFG

P1-P3P4-P6P7-P9
TSM2537CQ
Taiwan Semiconductor
1 Version: A1610
N- and P-Channel 20V (D-S) Power MOSFET
FEATURES
● Low R
DS(ON)
to minimize conductive losses
● Low gate charge for fast power switching
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Load Switch
● Power Management
● Portable Devices
KEY PERFORMANCE PARAMETERS
PARAMETER
TYPE
VALUE
UNIT
V
DS
N-ch
20
V
P-ch
-20
R
DS(on)
(max)
V
GS
= 4.5V
N-ch
30
mΩ
V
GS
= 2.5V
36
V
GS
= 1.8V
42
V
GS
= -4.5V
P-ch
55
V
GS
= -2.5V
78
V
GS
= -1.8V
90
Q
g
N-ch
9.1
nC
P-ch
9.8
Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
N-ch
P-ch
UNIT
Drain-Source Voltage
V
DS
20
-20
V
Gate-Source Voltage
V
GS
±12
±12
V
Continuous Drain Current
(Note 1)
T
C
= 25°C
I
D
11.6
-9
A
T
A
= 25°C
6.4
-5
Pulsed Drain Current
I
DM
46.4
-36
A
Total Power Dissipation
T
C
= 25°C
P
D
6.25
6.25
W
T
C
= 125°C
1.25
1.25
Total Power Dissipation
T
A
= 25°C
P
D
1.89
1.89
W
T
A
= 125°C
0.38
0.38
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Thermal Resistance – Junction to Case
R
ӨJC
20
°C/W
Thermal Resistance – Junction to Ambient
R
ӨJA
66
Thermal Performance Note: R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is
determined by the user’s board design.
TSM2537CQ
Taiwan Semiconductor
2 Version: A1610
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYPE
MIN
TYP
MAX
UNIT
Static
Drain-Source Breakdown
Voltage
V
GS
= 0V, I
D
= 250µA
BV
DSS
N-ch
20
--
--
V
V
GS
= 0V, I
D
= -250µA
P-ch
-20
--
--
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 250µA
V
GS(TH)
N-ch
0.5
0.8
1
V
V
GS
= V
DS
, I
D
= -250µA
P-ch
-0.45
-0.7
-1
Gate-Source Leakage
Current
V
GS
= ±12V, V
DS
= 0V
I
GSS
N-ch
--
--
±100
nA
V
GS
= ±12V, V
DS
= 0V
P-ch
--
--
±100
Drain-Source Leakage
Current
V
GS
= 0V, V
DS
= 20V
I
DSS
N-ch
--
--
1
µA
V
GS
= 0V, V
DS
= 20V
T
J
= 125°C
--
--
100
V
GS
= 0V, V
DS
= -20V
P-ch
--
--
-1
V
GS
= 0V, V
DS
= -20V
T
J
= 125°C
--
--
-100
Drain-Source On-State
Resistance
(Note 2)
V
GS
= 4.5V, I
D
= 6.4A
R
DS(on)
N-ch
--
17
30
mΩ
V
GS
= 2.5V, I
D
= 5.8A
--
22
36
V
GS
= 1.8V, I
D
= 5.4A
--
32
42
V
GS
= -4.5V, I
D
= -5A
P-ch
--
48
55
V
GS
= -2.5V, I
D
= -4.2A
--
60
78
V
GS
= -1.8V, I
D
= -3.9A
--
78
90
Forward
Transconductance
(Note 2)
V
DS
= 5V, I
D
= 6.4A
g
fs
N-ch
--
28
--
S
V
DS
= -5V, I
D
= -5A
P-ch
--
15
--
Dynamic
(Note 3)
Total Gate Charge
N-ch
V
GS
= 4.5V,
V
DS
= 10V, I
D
= 6.4A
P-ch
V
GS
= -4.5V,
V
DS
= -10V, I
D
= -5A
Q
g
N-ch
--
9.1
--
nC
P-ch
--
9.8
--
Gate-Source Charge
Q
gs
N-ch
--
1.3
--
P-ch
--
1.1
--
Gate-Drain Charge
Q
gd
N-ch
--
2.7
--
P-ch
--
2.7
--
Input Capacitance
N-ch
V
GS
= 0V, V
DS
= 10V
f = 1.0MHz
P-ch
V
GS
= 0V, V
DS
= -10V
f = 1.0MHz
C
iss
N-ch
--
677
--
pF
P-ch
--
744
--
Output Capacitance
C
oss
N-ch
--
120
--
P-ch
--
106
--
Reverse Transfer
Capacitance
C
rss
N-ch
--
89
--
P-ch
--
97
--
Gate Resistance
f = 1.0MHz
R
g
N-ch
--
3
--
Ω
P-ch
--
80
--
TSM2537CQ
Taiwan Semiconductor
3 Version: A1610
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYPE
MIN
TYP
MAX
UNIT
Switching
(Note 3)
Turn-On Delay Time
N-ch
V
GS
= 4.5V, R
G
= 2Ω
V
DS
= 10V, I
D
= 6.4A
P-ch
V
GS
= -4.5V, R
G
= 2Ω
V
DS
= -10V, I
D
= -5A
t
d(on)
N-ch
--
8
--
ns
P-ch
--
10
--
Turn-On Rise Time
t
r
N-ch
--
41
--
P-ch
--
34
--
Turn-Off Delay Time
t
d(off)
N-ch
--
25
--
P-ch
--
69
--
Turn-Off Fall Time
t
f
N-ch
--
30
--
P-ch
--
68
--
Source-Drain Diode
Forward Voltage
(Note 2)
V
GS
= 0V, I
S
= 6.4A
V
SD
N-ch
--
0.7
--
V
V
GS
= 0V, I
S
= -5A
P-ch
--
-0.8
--
Reverse recovery Time
N-ch I
S
= 6.4A,
dI/dt=100A/µs
P-ch I
S
= -5A,
dI/dt=100A/µs
t
rr
N-ch
22
nc
P-ch
113
Reverse Recovery
Charge
Q
rr
N-ch
--
6
nc
P-ch
--
160
Notes:
1. Silicon limited current only.
2. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
3. Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
PACKAGE
PACKING
TSM2537CQ RFG
TDFN22
3,000pcs / 7” Reel
P1-P3P4-P6P7-P9

TSM2537CQ RFG

Mfr. #:
Buy TSM2537CQ RFG
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET MOSFET Complementary N-Ch, 20V, 11.6A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet