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TSM2537CQ RFG

P1-P3P4-P6P7-P9
TSM2537CQ
Taiwan Semiconductor
4 Version: A1610
CHARACTERISTICS CURVES (N-Channel)
(T
A
= 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
I
D
, Drain Current (A)
V
GS
, Gate to Source Voltage (V)
V
DS
, Drain to Source Voltage (V)
R
DS(ON)
, Drain-Source On-Resistance (Ω)
I
D
, Drain Current (A)
V
GS
, Gate to Source Voltage (V)
Q
g
, Gate Charge (nC)
R
DS(on)
, Drain-Source On-Resistance
(Normalized)
T
J
, Junction Temperature (°C)
R
DS(on)
, Drain-Source On-Resistance (Ω)
V
GS
, Gate to Source Voltage (V)
I
D
, Drain Current (A)
0.6
0.8
1
1.2
1.4
1.6
-75 -50 -25 0 25 50 75 100 125 150
V
GS
=4.5V
I
D
=6.4A
0
0.9
1.8
2.7
3.6
4.5
0 2 4 6 8 10
V
DS
=10V
I
D
=6.4A
0
2
4
6
8
10
0 1 2 3 4
V
GS
=4.5V
V
GS
=3.5V
V
GS
=2.5V
V
GS
=1.8V
V
GS
=1.6V
V
GS
=1.3V
V
GS
=1.4V
0.01
0.02
0.03
0.04
0.05
0 2 4 6 8 10
V
GS
=4.5V
V
GS
=2.5V
V
GS
=1.8V
0
0.02
0.04
0.06
0.08
0.1
1.5 2 2.5 3 3.5 4 4.5
I
D
=6.4A
0
2
4
6
8
10
0 1 2 3 4
25℃
-55℃
150℃
TSM2537CQ
Taiwan Semiconductor
5 Version: A1610
CHARACTERISTICS CURVES (N-Channel)
(T
A
= 25°C unless otherwise noted)
Capacitance vs. Drain-Source Voltage
BV
DSS
vs. Junction Temperature
Maximum Safe Operating Area, Junction-to-Case
Source-Drain Diode Forward Current vs. Voltage
Normalized Thermal Transient Impedance, Junction-to-Case
I
S
, Reverse Drain Current (A)
V
SD
, Body Diode Forward Voltage (V)
Normalized Effective Transient
Thermal Impedance, Z
ӨJC
t, Square Wave Pulse Duration (sec)
C, Capacitance (pF)
V
DS
, Drain to Source Voltage (V)
BV
DSS
(Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature (°C)
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
0.8
0.9
1
1.1
1.2
-75 -50 -25 0 25 50 75 100 125 150
I
D
=1mA
0.1
1
10
100
0.2 0.4 0.6 0.8 1 1.2
25℃
150℃
-55℃
0
200
400
600
800
1000
1200
0 5 10 15 20
CISS
COSS
CRSS
0.1
1
10
100
0.1 1 10 100
R
DS(ON)
100us
1ms
10ms
DC
SINGLE PULSE
R
ӨJC
=20°C/W
T
C
=25
°
C
0.01
0.1
1
10
0.0001 0.001 0.01 0.1
SINGLE PULSE
R
ӨJC
=20°C/W
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
Notes:
Duty = t
1
/ t
2
T
J
= T
C
+ P
DM
x Z
ӨJC
x R
ӨJC
TSM2537CQ
Taiwan Semiconductor
6 Version: A1610
CHARACTERISTICS CURVES (P-Channel)
(T
A
= 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
-I
D
, Drain Current (A)
-V
GS
, Gate to Source Voltage (V)
-I
D
, Drain Current (A)
-V
DS
, Drain to Source Voltage (V)
R
DS(ON)
, Drain-Source On-Resistance (Ω)
-I
D
, Drain Current (A)
-V
GS
, Gate to Source Voltage (V)
Q
g
, Gate Charge (nC)
R
DS(on)
, Drain-Source On-Resistance
(Normalized)
T
J
, Junction Temperature (°C)
R
DS(on)
, Drain-Source On-Resistance (Ω)
-V
GS
, Gate to Source Voltage (V)
0.6
0.8
1
1.2
1.4
-75 -50 -25 0 25 50 75 100 125 150
V
GS
=-4.5V
I
D
=-5A
0
0.9
1.8
2.7
3.6
4.5
0 2 4 6 8 10
V
DS
=-10V
I
D
=-5A
0
1
2
3
4
5
0 1 2 3 4
V
GS
=-4.5V
V
GS
=-3.5V
V
GS
=-2.5V
V
GS
=-1.8V
V
GS
=-1.6V
V
GS
=-1.5V
V
GS
=-1.1V
V
GS
=-1.2V
V
GS
=-1.3V
V
GS
=-1.4V
0
1
2
3
4
5
0 1 2 3 4
25℃
-55℃
150℃
0
0.02
0.04
0.06
0.08
0.1
0 1 2 3 4 5
V
GS
=-4.5V
V
GS
=-2.5V
V
GS
=-1.8V
0
0.05
0.1
0.15
0.2
1.5 2 2.5 3 3.5 4 4.5
I
D
=-5A
P1-P3P4-P6P7-P9

TSM2537CQ RFG

Mfr. #:
Buy TSM2537CQ RFG
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET MOSFET Complementary N-Ch, 20V, 11.6A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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