STY60NM60
2/8
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
(1) I
SD
≤60A, di/dt ≤400 A/µs, V
DD
≤ V
(BR)DSS
,T
j
≤T
JMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
=0)
600 V
V
DGR
Drain-gate Voltage (R
GS
=20kΩ)
600 V
V
GS
Gate- source Voltage ±30 V
I
D
Drain Current (continuous) at T
C
= 25°C
60 A
I
D
Drain Current (continuous) at T
C
= 100°C
37.8 A
I
DM
( )
Drain Current (pulsed) 240 A
P
TOT
Total Dissipation at T
C
= 25°C
560 W
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=15KΩ) 6KV
Derating Factor 4.5 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
T
stg
Storage Temperature –65 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
Rthj-case Thermal Resistance Junction-case Max 0.22 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
30 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
=I
AR
,V
DD
=35V)
1.4 J
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain) 30 V
