STY60NM60 Datasheet STY60NM60 | P4-P6

STY60NM60

4/8

Safe Operating Area Thermal Impedance

Transconductance

Transfer Characteristics

Output Characteristics

Static Drain-source On Resistance

5/8

STY60NM60

Capacitance VariationsGate Charge vs Gate-source Voltage

Normalized BVDSS vs Temperature

Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

Normalized Gate Threshold Voltage vs Temp.

STY60NM60

6/8

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

MOSFET N-Ch 600 Volt 60 Amp

Lifecycle:

New from this manufacturer.

Delivery:

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