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PBSS301PX,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS301NX.
1.2 Features
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
PBSS301PX
12 V, 5.3 A PNP low V
CEsat
(BISS) transistor
Rev. 02 — 17 November 2009 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter voltage open base - - −12 V
I
C
collector current - - −5.3 A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
--−10.6 A
R
CEsat
collector-emitter
saturation resistance
I
C
= −4A;
I
B
= −200 mA
[1]
-2840mΩ
PBSS301PX_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 17 November 2009 2 of 15
NXP Semiconductors
PBSS301PX
12 V, 5.3 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2. Pinning
Pin Description Simplified outline Symbol
1emitter
2 collector
3base
321
sym07
9
1
2
3
Table 3. Ordering information
Type number Package
Name Description Version
PBSS301PX SC-62 plastic surface-mounted package; collector pad for
good heat transfer; 3 leads
SOT89
Table 4. Marking codes
Type number Marking code
[1]
PBSS301PX *5H
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PBSS301PX,115

Mfr. #:
Buy PBSS301PX,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS BISS TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
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