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PBSS301PX,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PBSS301PX_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 17 November 2009 6 of 15
NXP Semiconductors
PBSS301PX
12 V, 5.3 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −12 V; I
E
=0A - - −100 nA
V
CB
= −12 V; I
E
=0A;
T
j
=150°C
--−50 μA
I
EBO
emitter-base cut-off
current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V; I
C
= −0.5 A
[1]
250 400 -
V
CE
= −2V; I
C
= −1A
[1]
250 380 -
V
CE
= −2V; I
C
= −2A
[1]
200 335 -
V
CE
= −2V; I
C
= −4A
[1]
150 250 -
V
CE
= −2V; I
C
= −6A
[1]
130 200 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −0.5 A; I
B
= −50 mA
[1]
- −20 −30 mV
I
C
= −1A; I
B
= −50 mA
[1]
- −40 −60 mV
I
C
= −1A; I
B
= −10 mA
[1]
- −60 −90 mV
I
C
= −2A; I
B
= −40 mA
[1]
- −70 −100 mV
I
C
= −4A; I
B
= −200 mA
[1]
- −115 −160 mV
I
C
= −4A; I
B
= −400 mA
[1]
- −110 −155 mV
I
C
= −4A; I
B
= −40 mA
[1]
- −150 −240 mV
I
C
= −5.3 A; I
B
= −265 mA
[1]
- −145 −210 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −4A; I
B
= −200 mA
[1]
-2840mΩ
I
C
= −4A; I
B
= −40 mA
[1]
-3860mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1A; I
B
= −100 mA
[1]
- −0.82 −0.9 V
I
C
= −4A; I
B
= −400 mA
[1]
- −0.93 −1.05 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2V; I
C
= −2A
[1]
- −0.76 −0.85 V
t
d
delay time V
CC
= −12.5 V; I
C
= −3A;
I
Bon
= −0.15 A; I
Boff
=0.15A
-10-ns
t
r
rise time - 55 - ns
t
on
turn-on time - 65 - ns
t
s
storage time - 165 - ns
t
f
fall time - 160 - ns
t
off
turn-off time - 325 - ns
f
T
transition frequency V
CE
= −10 V; I
C
= −0.1 A;
f=100MHz
-140-MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
- 190 250 pF
PBSS301PX_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 17 November 2009 7 of 15
NXP Semiconductors
PBSS301PX
12 V, 5.3 A PNP low V
CEsat
(BISS) transistor
V
CE
= −2V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
V
CE
= −2V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
006aaa588
400
600
200
800
1000
h
FE
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(3)
(2)
(1)
006aaa594
V
CE
(V)
0 −5−4−2 −3−1
−6
−8
−4
−2
−10
−12
−14
I
C
(A)
0
−45
−40
−35
−30
−25
−20
−15
−10
−5
IB (mA) = −50
006aaa589
−0.4
−0.8
−1.2
V
BE
(V)
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(3)
(2)
(1)
006aaa592
−0.4
−0.8
−1.2
V
BEsat
(V)
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(3)
(2)
(1)
PBSS301PX_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 17 November 2009 8 of 15
NXP Semiconductors
PBSS301PX
12 V, 5.3 A PNP low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
006aaa590
−10
−1
−10
−2
−1
V
CEsat
(V)
−10
−3
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(3)
(2)
(1)
006aaa591
−10
−1
−10
−2
−1
V
CEsat
(V)
−10
−3
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(3)
(2)
(1)
006aaa593
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
10
−1
1
10
10
2
R
CEsat
(Ω)
10
−2
(3)
(2)
(1)
006aaa595
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(3)
(2)
(1)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PBSS301PX,115

Mfr. #:
Buy PBSS301PX,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS BISS TAPE-7
Lifecycle:
New from this manufacturer.
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