2DA1201Y-7

2DA1201Y
Document number: DS35644 Rev: 3 - 2
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2DA1201Y
120V PNP SILICON TRANSISTOR IN SOT89
Features
BV
CEO
> -120V
Max Continuous Current I
C
= -0.8A
High Gain Holds up h
FE
120 @ I
C
= -100mA
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Mechanical Data
Case: SOT89
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.05 grams (Approximate)
Ordering Information (Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
2DA1201Y-7 AEC-Q101 1T2 7 12 1,000
2DA1201YQTC Automotive 1T2 13 12 4,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Top View
Device Symbol
Top View
Pin Out
SOT89
C
E
C
B
C
E
B
1T2 = Product Type Marking Code
1T2
2DA1201Y
Document number: DS35644 Rev: 3 - 2
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2DA1201Y
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-120 V
Collector-Emitter Voltage
V
CEO
-120 V
Emitter-Base Voltage
V
EBO
-7 V
Continuous Collector Current
I
C
-800 mA
Peak Pulse Current (Note 6)
I
CM
-3 A
Base Current
I
B
-160 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 7)
P
D
1.5 W
Thermal Resistance, Junction to Ambient (Note 7)
R
θJA
83
°C/W
Thermal Resistance, Junction to Leads (Note 8)
R
θJL
18.3
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
ESD Ratings (Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
7. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
2DA1201Y
Document number: DS35644 Rev: 3 - 2
3 of 7
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August 2012
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2DA1201Y
Thermal Characteristics and Derating Information
100m 1 10 100
10m
100m
1
Single Pulse
T
amb
=25°C
25x25mm 1oz Cu
R
CE(sat)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-I
C
Collector Current (A)
-V
CE
Collector - Emitter Voltage (V)
0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25x25mm 1oz Cu
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
80
T
amb
=25°C
25x25mm 1oz Cu
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
T
amb
=25°C
25x25mm 1oz Cu
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
100m 1 10 100
10m
100m
1
Single Pulse
T
amb
=85°C
25x25mm 1oz Cu
R
CE(sat)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-I
C
Collector Current (A)
-V
CE
Collector - Emitter Voltage (V)

2DA1201Y-7

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 120V PNP Trans 100mA -0.8V PWR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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