2DA1201Y-7

2DA1201Y
Document number: DS35644 Rev: 3 - 2
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Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-120
-
- V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
-120
-
- V
I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-7
-
- V
I
E
= -100µA
Collector-Emitter Cut-off Current
I
CES
- - -100 nA
V
CE
= -120V
Collector Cut-off Current
I
CBO
- - -100 nA
V
CB
= -120V
Emitter Cut-off Current
I
EBO
- - -100 nA
V
EB
= -5V
Static Forward Current Transfer Ratio (Note 10)
h
FE
120 - 240 -
I
C
= -100mA, V
CE
= -5V
Collector-Emitter Saturation Voltage (Note 10)
V
CE
(
sat
)
- - -1 V
I
C
= -500mA, I
B
= -50mA
Base-Emitter Turn-On Voltage (Note 10)
V
BE
(
on
)
- - -1 V
I
C
= -500mA, V
CE
= -5V
Transition Frequency
f
T
- 160 - MHz
I
C
= -100mA, V
CE
= -5V
Output Capacitance
C
OBO
15 pF V
CB = -10V, IE = 0, f = 1MHz
Delay Time
t
(
d
)
- 62 - ns
V
CC
= -80V, I
C
= -100mA,
I
B1
= -10mA, I
B2
= 20mA
Rise Time
t
(
r
)
- 50 - ns
Storage Time
t
s
- 440 - ns
Fall Time
t
(
f
)
- 42 - ns
Note: 10. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
2DA1201Y
Document number: DS35644 Rev: 3 - 2
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Typical Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
1m 10m 100m 1
10m
100m
1
10m 100m 1
0.0
0.1
0.2
0.3
0.4
1m 10m 100m 1
0
50
100
150
200
250
300
1m 10m 100m 1
0.4
0.6
0.8
1.0
1m 10m 100m 1
0.2
0.4
0.6
0.8
1.0
I
C
/I
B
=100
V
CE(SAT)
v I
C
Tamb=2C
I
C
/I
B
=50
I
C
/I
B
=20
I
C
/I
B
=10
- V
CE(SAT)
(V)
- I
C
Collector Current (A)
100°C
V
BE(SAT)
v I
C
I
C
/I
B
=10
150°C
25°C
-55°C
- V
CE(SAT)
(V)
- I
C
Collector Current (A)
150°C
h
FE
v I
C
V
CE
=-5V
-55°C
25°C
100°C
h
FE
, DC Current Gain
- I
C
Collector Current (A)
150°C
25°C
V
CE(SAT)
v I
C
I
C
/I
B
=10
100°C
-55°C
- V
BE(SAT)
(V)
- I
C
Collector Current (A)
150°C
V
BE(ON)
v I
C
V
CE
=-5V
100°C
25°C
-55°C
- V
BE(ON)
(V)
- I
C
Collector Current (A)
2DA1201Y
Document number: DS35644 Rev: 3 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT89
Dim Min Max
A 1.40 1.60
B 0.44 0.62
B1 0.35 0.54
C 0.35 0.44
D 4.40 4.60
D1 1.62 1.83
E 2.29 2.60
e 1.50 Typ
H 3.94 4.25
H1 2.63 2.93
L 0.89 1.20
All Dimensions in mm
Dimensions Value (in mm)
X 0.900
X1 1.733
X2 0.416
Y 1.300
Y1 4.600
Y2 1.475
Y3 0.950
Y4 1.125
C 1.500
Y1
X1
Y2
Y
C
X (3x)
Y3
Y4
X2 (2x)
E
H
D1
B1
B
e
C
L
A
D
8° (4X)
H
R
0
.
2
0
0

2DA1201Y-7

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 120V PNP Trans 100mA -0.8V PWR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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