Obsolete Product(s) - Obsolete Product(s)
STP60NE06-16/FP
2/11
Table 3. Absolute Maximum Ratings
Note: 1. Pulse width limited by safe operating area
2. I
SD
≤ 60A, di/dt ≤ 300 A/µs, V
DD
≤ V(
BR)DSS
, T
j
≤ T
JMAX
Table 4. Thermal Data
Table 5. Avalanche Characteristics
Symbol Parameter
Value
Unit
STP60NE06-16 STP60NE06-16FP
V
DS
Drain-source Voltage (V
GS
= 0) 60 V
V
DGR
Drain- gate Voltage (R
GS
= 20 kΩ)60V
V
GS
Gate-source Voltage ± 20 V
I
D
Drain Current (cont.) at T
C
= 25 °C 60 35 A
I
D
Drain Current (cont.) at T
C
= 100 °C 42 24 A
I
DM
(1)
Drain Current (pulsed) 240 240 A
P
tot
Total Dissipation at T
C
= 25 °C 150 40 W
Derating Factor 1 0.3 W°/C
V
ISO
Insulation Withstand Voltage (DC) – 2000 V
dv/dt
(2)
Peak Diode Recovery voltage slope 6 V/ns
T
stg
Storage Temperature -65 to 175 °C
T
j
Max. Operating Junction Temperature 175 °C
Symbol Parameter
Value
Unit
TO-220 TO220-FP
R
thj-case
Thermal Resistance Junction-case Max 1 3.75 °C/W
R
thj-amb
Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max, δ < 1%)
60 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C; I
D
= I
AR
; V
DD
= 25 V)
350 mJ
