OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

STP60NE06-16

P1-P3P4-P6P7-P9P10-P11
Obsolete Product(s) - Obsolete Product(s)
STP60NE06-16/FP
4/11
Table 11. Source Drain Diode
Note: 1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Figure 3. Safe Operating Area for TO-220 Figure 4. Safe Operating Area for TO-220FP
Figure 5. Thermal Impedance for TO-220 Figure 6. Thermal Impedance for TO-220FP
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
Source-drain Current 60 A
I
SDM
(1)
Source-drain Current
(pulsed)
240 A
V
SD
(2)
Forward On Voltage I
SD
= 60 A; V
GS
= 0 1.5 V
t
rr
Reverse Recovery Time I
SD
= 60 A; di/dt = 100 A/µs 100 ns
Q
rr
Reverse RecoveryCharge V
DD
= 30 V; T
j
= 150 °C 0.4 µC
I
RRAM
Reverse RecoveryCharge 8 A
Obsolete Product(s) - Obsolete Product(s)
5/11
STP60NE06-16/FP
Figure 7. Output Characteristics Figure 8. Transfer Characteristics
Figure 9. Transconductance Figure 10. Static Drain-source On Resistance
Figure 11. Gate Charge vs Gate-source Voltage Figure 12. Capacitance Variations
Obsolete Product(s) - Obsolete Product(s)
STP60NE06-16/FP
6/11
Figure 13. Normalized Gate Thresold Voltage
vs Temperature
Figure 14. Normalized On Resistance vs
Temperature
Figure 15. Source-drain Diode Forward
Characteristics
P1-P3P4-P6P7-P9P10-P11

STP60NE06-16

Mfr. #:
Buy STP60NE06-16
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 60 Volt 60 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet