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SI2304BDS-T1-E3

P1-P3P4-P6P7-P8
Vishay Siliconix
Si2304BDS
Document Number: 72503
S11-1908-Rev. E, 26-Sep-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 30 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
•100 % R
g
Te s ted
• Compliant to RoHS Directive 2002/95/EC
Notes:
a. Surface mounted on FR4 board, t 5 s.
b. Pulse width limited by maximum junction temperature.
c. Surface mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()I
D
(A) Q
g
(Typ.)
30
0.070 at V
GS
= 10 V
3.2
2.6
0.105 at V
GS
= 4.5 V
2.6
Ordering Information: Si2304BDS-T1-E3 (Lead (Pb)-free)
Si2304BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
* Marking Code
Si2304BDS (L4)*
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a, b
T
A
= 25 °C
I
D
3.2 2.6
A
T
A
= 70 °C
2.5 2.1
Pulsed Drain Current
I
DM
10
Continuous Source Current (Diode Conduction)
a, b
I
S
0.9 0.62
Maximum Power Dissipation
a, b
T
A
= 25 °C
P
D
1.08 0.75
W
T
A
= 70 °C
0.69 0.48
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t 5 s
R
thJA
90 115
°C/W
Steady State 130 166
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
60 75
www.vishay.com
2
Document Number: 72503
S11-1908-Rev. E, 26-Sep-11
Vishay Siliconix
Si2304BDS
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test: PW 300 µs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SPECIFICATIONS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions
Limits
Unit
Min. Typ. Max.
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 µA
30
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
1.5 3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
0.5
µA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
10
V
DS
= 30 V, V
GS
= 1 V, T
J
= 25 °C
1
On-State Drain Current
a
I
D(on)
V
DS
4.5 V, V
GS
= 10 V
6A
Drain-Source On-Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 2.5 A
0.055 0.070
V
GS
= 4.5 V, I
D
= 2 A
0.080 0.105
Forward Transconductance
a
g
fs
V
DS
= 4.5 V, I
D
= 2.5 A
6S
Diode Forward Voltage
V
SD
I
S
= 1.25 A, V
GS
= 0 V
0.8 1.2 V
Dynamic
Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 5 V, I
D
= 2.5 A
2.6 4
nC
Total Gate Charge
Q
gt
V
DS
= 15 V, V
GS
= 10 V, I
D
= 2.5 A
4.6 7
Gate-Source Charge
Q
gs
0.8
Gate-Drain Charge
Q
gd
1.15
Gate Resistance
R
g
f = 1 MHz 0.6 3 6
Input Capacitance
C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
225
pFOutput Capacitance
C
oss
50
Reverse Transfer Capacitance
C
rss
28
Switching
Turn - O n D e l ay Tim e
t
d(on)
V
DD
= 15 V, R
L
= 15
I
D
1 A, V
GEN
= 10 V, R
g
= 6
7.5 12
ns
Rise Time
t
r
12.5 20
Turn-Off Delay Time
t
d(off)
19 30
Fall Time
t
f
15 25
Output Characteristics
0
2
4
6
8
10
0246810
V
GS
= 10 thru 5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
4 V
3 V
Transfer Characteristics
0
2
4
6
8
10
012345
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
Document Number: 72503
S11-1908-Rev. E, 26-Sep-11
www.vishay.com
3
Vishay Siliconix
Si2304BDS
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
-R
DS(on)
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0246810
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
012345
V
DS
= 15 V
I
D
= 2.5 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
10
0.001
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.01
0.1
1
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
50
100
150
200
250
300
350
0 5 10 15 20 25 30
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 2.5 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance (Normalized)
0.00
0.04
0.08
0.12
0.16
0.20
0246810
I
D
= 2.5 A
-R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
P1-P3P4-P6P7-P8

SI2304BDS-T1-E3

Mfr. #:
Buy SI2304BDS-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V 3.2A 0.07Ohm
Lifecycle:
New from this manufacturer.
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