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IRF9540NSTRR

P1-P3P4-P6P7-P9P10-P11
IRF9540NS/L
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
+
-
+
+
+
-
-
-
R
G
V
DD
• dv/dt controlled by R
G
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
V
GS
[ ]
[ ]
*** V
GS
= 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For P-Channel HEXFETS
IRF9540NS/L
D
2
Pak Package Outline
D
2
Pak Part Marking Information
F
5
3
0
S
T
H
I
S
I
S
A
N
I
R
F
5
3
0
S
W
I
T
H
L
O
T
C
O
D
E
8
0
2
4
A
S
S
E
M
B
L
E
D
O
N
W
W
0
2
,
2
0
0
0
I
N
T
H
E
A
S
S
E
M
B
L
Y
L
I
N
E
"
L
"
A
S
S
E
M
B
L
Y
L
O
T
C
O
D
E
I
N
T
E
R
N
A
T
I
O
N
A
L
R
E
C
T
I
F
I
E
R
L
O
G
O
P
A
R
T
N
U
M
B
E
R
D
A
T
E
C
O
D
E
Y
E
A
R
0
=
2
0
0
0
W
E
E
K
0
2
L
I
N
E
L
IRF9540NS/L
TO-262 Part Marking Information
TO-262 Package Outline
E
X
A
M
P
L
E
:
T
H
I
S
I
S
A
N
I
R
L
3
1
0
3
L
L
O
T
C
O
D
E
1
7
8
9
A
S
S
E
M
B
L
Y
P
A
R
T
N
U
M
B
E
R
D
A
T
E
C
O
D
E
W
E
E
K
1
9
L
I
N
E
C
L
O
T
C
O
D
E
Y
E
A
R
7
=
1
9
9
7
A
S
S
E
M
B
L
E
D
O
N
W
W
1
9
,
1
9
9
7
I
N
T
H
E
A
S
S
E
M
B
L
Y
L
I
N
E
"
C
"
L
O
G
O
R
E
C
T
I
F
I
E
R
I
N
T
E
R
N
A
T
I
O
N
A
L
P1-P3P4-P6P7-P9P10-P11

IRF9540NSTRR

Mfr. #:
Buy IRF9540NSTRR
Manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 100V 23A D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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