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PTAC240502FCV1XWSA1

P1-P3P4-P6P7-P8
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 8 Rev. 02.2, 2014-05-14
PTAC240502FC
Thermally-Enhanced High Power RF LDMOS FET
50 W, 28 V, 2300 – 2400 MHz
Description
The PTAC240502FC is a 47-watt LDMOS FET with an
asymmetrical design intended for use in multi-standard cellular
power amplifi er applications in the 2300 to 2400 MHz frequency
band. Features include dual-path design, input matching, high gain
and thermally-enhanced package with earless fl anges. Manu-
factured with Infi neon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTAC240502FC
Package H-37248-4
RF Characteristics
Two-carrier WCDMA Specifi cations (tested in Infi neon Doherty test fi xture)
V
DD
= 28 V, I
DQ
= 120 mA, P
OUT
= 10 W avg, V
GS2
= 1.3 V, ƒ
1
= 2345 MHz, ƒ
2
= 2355 MHz, 3GPP signal,
channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Linear Gain G
ps
13 14.3 — dB
Drain Effi ciency
D
41 44 — %
Intermodulation Distortion IMD — –33 –25 dBc
Features
• Input matched
• Asymmetric Doherty design
- Main: P1dB = 17 W Typ
- Peak: P1dB = 33 W Typ
• Typical Pulsed CW performance, 2350 MHz,
28 V, 160 µs pulse width, 10% duty cycle,
Doherty Confi guration
- Output power at P
1dB
= 45.7 W
- Effi ciency = 46.2%
- Gain = 14.6 dB
• Typical single-carrier WCDMA performance,
2350 MHz, 28 V, 8.4 dB PAR @ 0.01% CCDF
- Output power = 8.91 W
- Effi ciency = 44.2%
- Gain = 14.2 dB
- ACPR = –31 dBc @ 5 MHz
• Capable of handling 10:1 VSWR @28 V, 50 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 1B (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
0
10
20
30
40
50
60
10
11
12
13
14
15
16
26 30 34 38 42 46
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 120 mA, V
GS1
= 2.6 V,
V
GS2
= 1.3 V, ƒ = 2400 MHz, 3GPP WCDMA
signal, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
Gain
Efficiency
ptac240502fc_g1
Data Sheet 2 of 8 Rev. 02.2, 2014-05-14
PTAC240502FC
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage V
GS
= 0 V, I
DS
= 10 mA V(
BR)DSS
65 — — V
Drain Leakage Current V
DS
= 28 V, V
GS
= 0 V I
DSS
— — 1 µA
V
DS
= 63 V, V
GS
= 0 V I
DSS
— — 10 µA
On-State Resistance (main) V
GS
= 10 V, V
DS
= 0.1 V R
DS(on)
— 0.4 —
On-State Resistance (peak) V
GS
= 10 V, V
DS
= 0.1 V R
DS(on)
— 0.2 —
Operating Gate Voltage (main) V
DS
= 28 V, I
DQ
= 120 mA V
GS
2.6 2.7 2.8 V
Operating Gate Voltage (peak) V
DS
= 28 V, I
DQ
= 0 mA V
GS
1.2 1.3 1.5 V
Gate Leakage Current V
GS
= 10 V, V
DS
= 0 V I
GSS
— — 1 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
DSS
65 V
Gate-Source Voltage V
GS
–6 to +10 V
Operating Voltage V
DD
0 to +32 V
Junction Temperature T
J
225 °C
Storage Temperature Range T
STG
–65 to +150 °C
Thermal Resistanc
e (T
CASE
= 60°C, 50 W CW) R
JC
1.29 °C/W
Ordering Information
Type and Version Order Code Package Description Shipping
PTAC240502FC V1 PTAC240502FCV1XWSA1 H-37248-4, earless fl ange Tray
PTAC240502FC V1 R250 PTAC240502FCV1R250XTMA1 H-37248-4, earless fl ange Tape & Reel, 250 pcs
PTAC240502FC
Data Sheet 3 of 8 Rev. 02.2, 2014-05-14
Typical Performance (data taken in a production test fi xture)
-45
-40
-35
-30
-25
-20
-15
26 30 34 38 42 46
IMD (dBc)
Output Power (dBm)
2300 IMDL
2300 IMDU
2350 IMDL
2350 IMDU
2400 IMDL
2400 IMDU
ptac240502fc_g3
5
15
25
35
45
55
65
75
10
11
12
13
14
15
16
17
26 30 34 38 42 46 50
Efficiency (%)
Gain (dB)
Output Power (dBm)
CW Performance
V
DD
= 28 V, I
DQ
= 120 mA
2300 MHz
2350 MHz
2400 MHz
Efficiency
Gain
ptac240502fc_g4
5
15
25
35
45
55
65
8
10
12
14
16
18
20
26 30 34 38 42 46 50
Efficiency (%)
Power Gain (dB)
Output Power (dBm)
CW Performance
at various V
DD
I
DQ
= 120 mA, ƒ = 2400 MHz
VDD = 24V
VDD = 28V
VDD = 32V
Gain
Efficiency
ptac240502fc_g5
10
20
30
40
50
60
-50
-40
-30
-20
-10
0
26 30 34 38 42 46
Drain Efficiency (%)
IMD & ACPR (dBc)
Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 120 mA, V
GS1
= 2.6 V,
V
GS2
= 1.3 V, ƒ = 2400 MHz, 3GPP WCDMA
signal, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
IMD Low
IMD Up
ACPR
Efficiency
ptac240502fc_g2
P1-P3P4-P6P7-P8

PTAC240502FCV1XWSA1

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Buy PTAC240502FCV1XWSA1
Manufacturer:
Infineon Technologies
Description:
RF MOSFET Transistors RFP-LD10M
Lifecycle:
New from this manufacturer.
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