OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VS-UFB130FA20

P1-P3P4-P6P7-P7
VS-UFB130FA20
www.vishay.com
Vishay Semiconductors
Revision: 26-Sep-17
1
Document Number: 93606
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Insulated Ultrafast Rectifier Module, 130 A
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (T
J
max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
The VS-UFB130FA20 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery current
shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored charge
and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/RFI.
PRIMARY CHARACTERISTICS
V
R
200 V
I
F(AV)
per module at T
C
= 126 °C 130 A
t
rr
32 ns
Type Modules - Diode FRED Pt
®
Package SOT-227
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
R
200 V
Continuous forward current per diode I
F
T
C
= 132 °C 65
A
Single pulse forward current per diode I
FSM
T
C
= 25 °C 890
Maximum power dissipation per module P
D
T
C
= 132 °C 119 W
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 minute 2500 V
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
VS-UFB130FA20
www.vishay.com
Vishay Semiconductors
Revision: 26-Sep-17
2
Document Number: 93606
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS PER DIODE (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
BR
I
R
= 100 μA 200 - -
V
Forward voltage V
FM
I
F
= 60 A - 0.96 1.13
I
F
= 60 A, T
J
= 175 °C - 0.75 0.89
Reverse leakage current I
RM
V
R
= V
R
rated - 2 50 μA
T
J
= 175 °C, V
R
= V
R
rated - - 1 mA
Junction capacitance C
T
V
R
= 200 V - 105 - pF
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 32 -
nsT
J
= 25 °C
I
F
= 50 A
dI
F
/dt = 200 A/μs
V
R
= 100 V
-42 -
T
J
= 125 °C - 68 -
Peak recovery current I
RRM
T
J
= 25 °C - 4.0 -
A
T
J
= 125 °C - 9.0 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 82 -
nC
T
J
= 125 °C - 295 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
R
thJC
- - 0.72
°C/WJunction to case, both leg conducting - - 0.36
Case to heatsink R
thCS
Flat, greased surface - 0.10 -
Weight -30 - g
Mounting torque
Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.8 (15.9) Nm (lbf.in)
Case style SOT-227
VS-UFB130FA20
www.vishay.com
Vishay Semiconductors
Revision: 26-Sep-17
3
Document Number: 93606
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Diode)
1
10
T
J
= 175 °C
T
J
= 25 °C
0
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
1000
0.5 1.5 2.512
0.01
0.1
1
10
100
0 100 150
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
200
50
0.001
1000
T
J
= 175 °C
T
J
= 25 °C
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(pF)
10
100
1000
1 10 100 1000
T
J
= 25 °C
Z
thJC
- Thermal Impedance (°C/W)
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
t
1
- Rectangular Pulse Duration (s)
DC
Single pulse
(thermal resistance)
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P7

VS-UFB130FA20

Mfr. #:
Buy VS-UFB130FA20
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 130 Amp 200 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet