VS-UFB130FA20

VS-UFB130FA20
www.vishay.com
Vishay Semiconductors
Revision: 26-Sep-17
4
Document Number: 93606
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
I
F(AV)
- Average Forward Current (A)
DC
0
25
50
75
100
125
150
175
0 25 50 75 100 125 150 175 200
Allowable Case Temperature (°C)
Square Wave (D = 0.5)
Rated V
R
applied
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
0
0 102030405060708090100110120
25
50
75
100
125
150
RMS Limit
D = 0.05
D = 0.10
D = 0.20
D = 0.50
D = 0.33
DC
t
rr
(ns)
0
10
20
30
40
50
60
70
80
T
J
= 125 °C
T
J
= 25 °C
I
F
= 50 A
V
rr
= 200 V
100 1000
dI
F
/dt (A/μs)
Q
rr
(nC)
0
100
200
300
400
500
600
700
800
0001001
T
J
= 125 °C
T
J
= 25 °C
I
F
= 50 A
V
rr
= 200 V
dI
F
/dt (A/μs)
VS-UFB130FA20
www.vishay.com
Vishay Semiconductors
Revision: 26-Sep-17
5
Document Number: 93606
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust
Q
rr
0.5 I
RRM
di
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
di
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
VS-UFB130FA20
www.vishay.com
Vishay Semiconductors
Revision: 26-Sep-17
6
Document Number: 93606
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
2 separate diodes,
parallel pin-out
F
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95423
Packaging information www.vishay.com/doc?95425
1 - Vishay Semiconductors product
2 - Ultrafast rectifier
3
- Ultrafast Pt diffused
4 - Current rating (130 = 130 A)
5 - Circuit configuration (2 separate diodes, parallel pin-out)
6 - Package indicator (SOT-227 standard insulated base)
- Voltage rating (20 = 200 V)
7
Device code
51 32 4 6 7
VS- UF B 130 F A 20
1
43
2
Lead Assignment
1
4
2
3

VS-UFB130FA20

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 130 Amp 200 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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