©2002 Fairchild Semiconductor Corporation RFD3055, RFD3055SM, RFP3055 Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD3055, RFD3055SM, RFP3055 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
60 V
Drain to Gate Voltage (R
GS
= 20K
Ω
) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
60 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±
20 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
12 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Refer to Peak Current Curve A
Single Pulse Avalanche Rating (Figures 14, 15) . . . . . . . . . . . . . . . . . . . . . . . . . . I
AS
Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
53 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.357 W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 250
µ
A, V
GS
= 0V (Figure 11) 60 - - V
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250
µ
A (Figure 10) 2 - 4 V
Zero Gate Voltage Drain Current I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V - - 1
µ
A
T
C
= 125
o
C, V
DS
= 0.8 x Rated BV
DSS
--25
µ
A
Gate to Source Leakage Current I
GSS
V
GS
=
±
20V - - 100 nA
Drain to Source On Resistance r
DS(ON)
I
D
= 12A, V
GS
= 10V (Figure 9) (Note 2) - - 0.150
Ω
Turn-On Time t
ON
V
DD
= 30V, I
D
= 12A
R
L
= 2.5
Ω
, V
GS
= +10V
R
G
= 10
Ω
(Figure 13)
- - 40 ns
Turn-On Delay Time t
d(ON)
-7-ns
Rise Time t
r
-21- ns
Turn-Off Delay Time t
d(OFF)
-16- ns
Fall Time t
f
-10- ns
Turn-Off Time t
OFF
- - 40 ns
Total Gate Charge Q
g(TOT)
V
GS
= 0 to 20V V
DD
= 48V,I
D
= 12A,
R
L
= 4
Ω,
I
g(REF)
= 0.24mA
(Figure 13)
-1923nC
Gate Charge at 10V Q
g(10)
V
GS
= 0 to 10V - 10 12 nC
Threshold Gate Charge Q
g(TH)
V
GS
= 0 to 2V - 0.6 0.8 nC
Input Capacitance C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz (Figure 12)
- 300 - pF
Output Capacitance C
OSS
- 100 - pF
Reverse Transfer Capacitance C
RSS
-30- pF
Thermal Resistance Junction to Case R
θ
JC
- - 2.8
o
C/W
Thermal Resistance Junction to Ambient R
θ
JA
TO-251 and TO-252 - - 100
o
C/W
TO-220 - - 62.5
o
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
SD
I
SD
= 12A - - 1.5 V
Reverse Recovery Time t
rr
I
SD
= 12A, dI
SD
/dt = 100A/
µ
s - - 100 ns
NOTES:
2. Pulse Test: Pulse Width
≤
300ms, Duty Cycle
≤
2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
RFD3055, RFD3055SM, RFP3055
