©2002 Fairchild Semiconductor Corporation RFD3055, RFD3055SM, RFP3055 Rev. B
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
Typical Performance Curves Unless Otherwise Specified (Continued)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
50
10
1
0.001 0.01 0.1 1
t
AV ,
TIME IN AVALANCHE (ms)
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R ≠ 0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
I
AS
, AVALANCHE CURRENT (A)
24
18
12
6
0
0 1.5 3.0 4.5 6.0 7.5
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
25
o
C
175
o
C
0246810
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, ON STATE DRAIN CURRENT (A)
24
18
12
6
0
PULSE DURATION = 80µs
-55
o
C
V
DS
= 15V
DUTY CYCLE = 0.5% MAX
2.5
2.0
1.5
1.0
0.5
0
-80 -40 0 40 80 120 160 200
NORMALIZED DRAIN TO SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80µs
ON RESISTANCE
V
GS
= 10V, I
D
= 12A
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
0
-80 -40 0 40 80 160120 200
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED GATE THRESHOLD VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80 120 160 200
NORMALIZED DRAIN TO SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250µA
BREAKDOWN VOLTAGE
RFD3055, RFD3055SM, RFP3055
