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NTD4805NT4G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 8
1 Publication Order Number:
NTD4805N/D
NTD4805N, NVD4805N
Power MOSFET
30 V, 88 A, Single N−Channel, DPAK/IPAK
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current (R
q
JA
) (Note 1
)
Steady
State
T
A
= 25°C
I
D
17.4
A
T
A
= 85°C 13.5
Power Dissipation
(R
q
JA
) (Note 1)
T
A
= 25°C P
D
2.65 W
Continuous Drain
Current (R
q
JA
) (Note 2
)
T
A
= 25°C
I
D
12.7
A
T
A
= 85°C 9.8
Power Dissipation
(R
q
JA
) (Note 2)
T
A
= 25°C P
D
1.41 W
Continuous Drain
Current (R
q
JC
)
(Note 1)
T
C
= 25°C
I
D
95
A
T
C
= 85°C 73
Power Dissipation
(R
q
JC
) (Note 1)
T
C
= 25°C P
D
79 W
Pulsed Drain Current
t
p
=10ms
T
A
= 25°C I
DM
175 A
Current Limited by Package T
A
= 25°C I
DmaxPkg
45 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
175
°C
Source Current (Body Diode) I
S
55 A
Source Current (Body Diode) Pulsed t
p
=20 ms
I
SM
175 A
Drain to Source dV/dt dV/dt 6.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 24 V, V
GS
= 10 V,
L = 1.0 mH, I
L(pk)
= 24 A, R
G
= 25 W)
E
AS
288 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
DPAK
CASE 369AA
(Bent Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
IPAK
CASE 369D
(Straight Lead DPAK
)
STYLE 2
30 V
5.0 mW @ 10 V
R
DS(on)
MAX
88 A
I
D
MAXV
(BR)DSS
7.4 mW @ 4.5 V
http://onsemi.com
See detailed ordering and shipping information on page 6 o
f
this data sheet.
ORDERING INFORMATION
1
2
3
4
N−Channel
D
S
G
1
Gate
2
Drain
3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Source
AYWW
48
05NG
AYWW
48
05NG
A = Assembly Location*
Y = Year
WW = Work Week
4805N = Device Code
G = Pb−Free Package
1
2
3
4
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
NTD4805N, NVD4805N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
R
q
JC
1.9
°C/W
Junction−to−TAB (Drain)
R
q
JC−TAB
3.5
Junction−to−Ambient − Steady State (Note 1)
R
q
JA
56.6
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
106.6
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
27 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C 1.0 mA
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V "100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.5 2.5 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
5.86 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 to
11.5 V
I
D
= 30 A 4.3 5.0 mW
I
D
= 15 A 4.2
V
GS
= 4.5 V
I
D
= 30 A 6.0 7.4
I
D
= 15 A 5.8
Forward Transconductance g
FS
V
DS
= 15 V, I
D
= 15 A 17 S
CHARGES AND CAPACITANCES
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 12 V
2865
pF
Output Capacitance C
oss
610
Reverse Transfer Capacitance C
rss
338
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 30 A
20.5 26
nC
Threshold Gate Charge Q
G(TH)
4.05
Gate−to−Source Charge Q
GS
8.28
Gate−to−Drain Charge Q
GD
8.36
Total Gate Charge Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A
48 nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(on)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
17.2
ns
Rise Time t
r
20.3
Turn−Off Delay Time t
d(off)
20.8
Fall Time t
f
8.0
Turn−On Delay Time t
d(on)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
10.8
ns
Rise Time t
r
20.5
Turn−Off Delay Time t
d(off)
30.8
Fall Time t
f
4.4
NTD4805N, NVD4805N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted) (continued)
Parameter UnitMaxTypMinTest ConditionSymbol
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C 0.87 1.2
V
T
J
= 125°C 0.76
Reverse Recovery Time t
RR
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 30 A
25.7
ns
Charge Time ta 13.1
Discharge Time tb 12.6
Reverse Recovery Time Q
RR
18 nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25°C
2.49
nH
Drain Inductance, DPAK L
D
0.0164
Drain Inductance, IPAK L
D
1.88
Gate Inductance L
G
3.46
Gate Resistance R
G
0.8
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
P1-P3P4-P6P7-P8

NTD4805NT4G

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Manufacturer:
ON Semiconductor
Description:
MOSFET NFET 30V 88A 5MOHM
Lifecycle:
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