NTD4805NT4G

NTD4805N, NVD4805N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
4 V
10 V
50
0.01
60
0.001
0
9
0
2.0
1.5
1.0
0.5
10,000
100,000
05
30
21
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
3
0.045
4
0.020
0.010
0
5
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
−50 50250−25 75 125100
23
1510 2
5
5
3
V
DS
10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
V
GS
= 4.5 V
175
V
GS
= 0 V
I
D
= 30 A
V
GS
= 10 V
50
T
J
= 175°C
T
J
= 125°C
40
0
180
80
45
T
J
= 25°C
20
10
5 V
2.8 V
6 V
6
1000
4
90
10
120
610
0.030
70
0.005
80
3.2 V
4.5 V
3.4 V
3.6 V
3.8 V
110
40
10
20
60
80
70
20
140
60
100
I
D
= 30 A
T
J
= 25°C
789
0.005
0.015
0.025
0.040
0.035
55 65 75 85
V
GS
= 11.5 V
150
100
100
3 V
160
0.002
0.006
0.003
0.007
0.004
0.008
0.009
30 4035 45
NTD4805N, NVD4805N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
C
rss
10 0 10 15 25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
1000
0
V
GS
V
DS
2000
55
V
GS
= 0 VV
DS
= 0 V
T
J
= 25°C
C
iss
C
oss
C
rss
C
iss
3000
5000
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS
)
0
2
0
Q
G
, TOTAL GATE CHARGE (nC)
7
4
105
I
D
= 30 A
V
GS
= 4.5 V
T
J
= 25°C
Q
2
Q
1
Q
T
2515
0
0.5
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
1 10 100
1000
1
t, TIME (ns)
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.6 0.7 1
.0
5
10
15
t
r
t
d(off)
t
d(on)
t
f
10
V
DD
= 15 V
I
D
= 30 A
V
GS
= 11.5 V
0.8 0.9
20
30
25
T
J
= 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1 1 100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.1
1000
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
1 ms
100 ms
10 ms
dc
10 ms
20
6
1
100
0
25
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= 29 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50 75 175
50
100
150
100 125
200
250
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
150
4000
1
3
5
20
300
350
400
450
NTD4805N, NVD4805N
http://onsemi.com
6
TYPICAL PERFORMANCE CURVES
Figure 13. Avalanche Characteristics
10001 100
PULSE WIDTH (ms)
I
D
, DRAIN CURRENT (AMPS)
10
10
125°C
1
100
100°C
25°C
Figure 14. Thermal Response
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
t, TIME (s)
0.1
1.0
0.01
0.1
0.2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
R
q
JC
(t) = r(t) R
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
R
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
1.0E+00 1.0E+011.0E-011.0E-021.0E-031.0E-041.0E-05
ORDERING INFORMATION
Order Number Package Shipping
NTD4805NT4G DPAK
(Pb−Free)
2,500 / Tape & Reel
NTD4805N−1G IPAK
(Pb−Free)
75 Units / Rail
NVD4805NT4G* DPAK
(Pb−Free)
2,500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.

NTD4805NT4G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET 30V 88A 5MOHM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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