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STB70NF03LT4

P1-P3P4-P6P7-P9P10-P12P13-P15
July 2006 Rev 10 1/15
15
STB70NF03L
STP70NF03L - STB70NF03L-1
N-channel 30V - 0.0075Ω - 70A - D
2
PAK - I
2
PAK - TO-220
Low gate charge STripFET™ II Power MOSFET
General features
■ Conduction losses reduced
■ Switching losses reduced
Description
This application specific Power MOSFET is the
third genaration of STMicroelectronis unique
"Single Feature Size™" strip-based process. The
resulting transistor shows the best trade-off
between on-resistance and gate charge. When
used as high and low side in buck regulators, it
gives the best performance in terms of both
conduction and switching losses. This is
extremely important for motherboards where fast
switching and high efficiency are of paramount
importance.
Applications
■ Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STB70NF03L 30V < 0.0095Ω 70A
STP70NF03L 30V < 0.0095Ω 70A
STB70NF03L-1 30V < 0.0095Ω 70A
1
2
3
TO-220
I
2
PAK
D²PAK
1
3
1
2
3
www.st.com
Order codes
Part number Marking Package Packaging
STB70NF03L B70NF03L D²PAK Tape & reel
STP70NF03L P70NF03L TO-220 Tube
STB70NF03L-1 B70NF03L I²PAK Tube
Contents STB70NF03L - STP70NF03L - STB70NF03L-1
2/15
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STB70NF03L - STP70NF03L - STB70NF03L-1 Electrical ratings
3/15
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 30 V
V
DGR
Drain-gate voltage (R
GS
= 20kΩ)30V
V
GS
Gate- source voltage ± 18 V
I
D
Drain current (continuous) at T
C
= 25°C 70 A
I
D
Drain current (continuous) at T
C
= 100°C 50 A
I
DM
(1)
1. Current limited by the package
Drain current (pulsed) 280 A
P
TOT
Total dissipation at T
C
= 25°C 100 W
Derating factor 0.67 W/°C
dv/dt
(2)
2. I
SD
≤70A, di/dt ≤350A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ T
JMAX
Peak diode recovery voltage slope 5.5 V/ns
E
AS
(3)
3. Starting T
J
= 25
o
C, I
D
= 35A, V
DD
= 25V
Single pulse avalanche energy 500 mJ
T
stg
Storage temperature
-55 to 175 °C
T
J
Operating junction temperature
Table 2. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case Max 1.5 °C/W
R
thJA
Thermal resistance junction-ambient Max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
P1-P3P4-P6P7-P9P10-P12P13-P15

STB70NF03LT4

Mfr. #:
Buy STB70NF03LT4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 30 Volt 70 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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