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STB70NF03LT4

P1-P3P4-P6P7-P9P10-P12P13-P15
Electrical characteristics STB70NF03L - STP70NF03L - STB70NF03L-1
4/15
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3. ON/OFF states
Symbol Parameter Test conditions Min Typ Max Unit
V
(BR)DSS
Drain-source
Breakdown voltage
I
D
= 250µA, V
GS
= 0 30 V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating
T
C
= 125°C
1
10
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 18V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
I
D
= 250µA 1 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V I
D
= 35A
V
GS
= 5 V I
D
= 18A
0.0075
0.0135
0.0095
0.018
W
W
Table 4. Dynamic
Symbol Parameter Test conditions Min Typ Max Unit
g
fs
(*)
Forward
transconductance
V
DS
= 15V I
D
=35A 25 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V f = 1 MHz V
GS
= 0
1440
560
135
pF
pF
pF
STB70NF03L - STP70NF03L - STB70NF03L-1 Electrical characteristics
5/15
Table 5. Switching times
Symbol Parameter Test conditions Min Typ Max Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 15V I
D
= 35A
R
G
=4.7Ω V
GS
= 5V
Figure 16.
22
165
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 15V I
D
= 70A
V
GS
= 5V
22.5
9
12
30 nC
nC
nC
t
d(off)
t
f
Turn-off delay time
Fall time
V
DD
= 15V I
D
= 35A
R
G
=4.7Ω, V
GS
= 5V
Figure 16.
21
25
ns
ns
Table 6. Source drain diode
Symbol Parameter Test conditions Min Typ Max Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
70
280
A
A
V
SD
(2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward on voltage I
SD
= 70A V
GS
= 0 1.3 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 70A di/dt = 100A/µs
V
DD
= 20V T
J
= 150°C
Figure 15.
42
52
2.5
ns
nC
A
Electrical characteristics STB70NF03L - STP70NF03L - STB70NF03L-1
6/15
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
P1-P3P4-P6P7-P9P10-P12P13-P15

STB70NF03LT4

Mfr. #:
Buy STB70NF03LT4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 30 Volt 70 Amp
Lifecycle:
New from this manufacturer.
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