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ECH8697R-TL-W

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2016 1 Publication Order Number :
December 2016 - Rev. 3 ECH8697R/D
www.onsemi.com
ECH8697R
Power MOSFET
for 1-2 Cells Lithium-ion Battery Protection
24 V, 11.6 mΩ, 10 A, Dual N-Channel
This Power MOSFET features a low on-state resistance. This device is
suitable for applications such as power switches of portable machines.
Best suited for 1-2 cells Lithium-ion Battery applications.
Features
Low On-Resistance
2.5 V drive
Common-Drain Type
ESD Diode-Protected Gate
Built-in Gate Protection Resistor
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
1-2 cells Lithium-ion Battery Charging and Discharging Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C
(Note 1)
Parameter Symbol Value Unit
Drain to Source Voltage V
DSS
24 V
Gate to Source Voltage V
GSS
12.5 V
Drain Current (DC) I
D
10 A
Drain Current (Pulse)
PW 10 s, duty cycle 1%
I
DP
60
A
Power Dissipation
Surface mounted on ceramic substrate
(1000 mm
2
0.8 mm) 1 unit
P
D
1.5
W
Total Dissipation
Surface mounted on ceramic substrate
(1000 mm
2
0.8 mm)
P
T
1.6 W
Junction Temperature Tj 150 C
Storage Temperature Tstg 55 to +150 C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter Symbol Value Unit
Junction to Ambient
R
JA
83.3 C/W
Surface mounted on ceramic substrate
(1000 mm
2
0.8 mm) 1 unit
ELECTRICAL CONNECTION
N-Channel
V
DSS
R
DS
(on) Max I
D Max
24 V
11.6 mΩ @ 4.5 V
10 A
12.6 mΩ @ 4.0 V
15 mΩ @ 3.1 V
17.5 mΩ @ 2.5 V
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
8
765
1234
1:Source1
2:Gate1
3:Source2
4:Gate2
5:Drain
6:Drain
7:Drain
8:Drain
UU
LOT No.
MARKING
SOT-28FL / ECH8
ECH8697R
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS at Ta 25C
(Note 2)
Parameter Symbol Conditions
Value
Unit
min typ max
Drain to Source Breakdown Voltage V(
BR
)
DSS
I
D
= 1 mA, V
GS
= 0 V 24 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
= 20 V, V
GS
= 0 V 1 A
Gate to Source Leakage Current I
GSS
V
GS
= 8 V, V
DS
= 0 V 1 A
Gate Threshold Voltage V
GS
(th) V
DS
= 10 V, I
D
= 1 mA 0.5 1.3 V
Forward Transconductance g
FS
V
DS
= 10 V, I
D
= 5 A 5.0 S
Static Drain to Source On-State
Resistance
R
DS
(on)
I
D
= 5 A, V
GS
= 4.5 V 7.4 9.3 11.6 m
I
D
= 5 A, V
GS
= 4.0 V 7.7 9.7 12.6
m
I
D
= 5 A, V
GS
= 3.1 V 8.5 10.7 15
m
I
D
= 2.5 A, V
GS
= 2.5 V 10 12.5 17.5
m
Turn-ON Delay Time
t
d
(on)
See Fig. 1 (Note 3)
160 ns
Rise Time
t
r
230 ns
Turn-OFF Delay Time
t
d
(off)
19.7
s
Fall Time
t
f
23.6
s
Turn-ON Delay Time
t
d
(on)
See Fig. 2 (Note 3)
160
ns
Rise Time
t
r
230 ns
Turn-OFF Delay Time
t
d
(off)
980
s
Fall Time
t
f
350
s
Total Gate Charge Qg
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 10 A
6 nC
Gate to Source Charge Qgs 1.1 nC
Gate to Drain “Miller” Charge Qgd 0.9 nC
Forward Diode Voltage
V
SD
I
S
= 10 A, V
GS
= 0 V 0.8 1.2 V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Note 3 : The fall switching time is dependent on the input pulse width.
Fig.1 Switching Time Test Circuit 1 Fig.2 Switching Time Test Circuit 2
PW >10ms
D.C.≤1%
P. G
50Ω
G
S
D
I
D
=5A
R
L
=2Ω
R
g
=1.2kΩ
V
DD
=10V
V
OUT
V
IN
4.5V
0V
V
IN
ECH8697R
PW=10μs
D.C.≤1%
P. G
50Ω
G
S
D
I
D
=5A
R
L
=2Ω
R
g
=1.2kΩ
V
DD
=10V
V
OUT
V
IN
4.5V
0V
V
IN
ECH8697R
ECH8697R
www.onsemi.com
3
--60 --40 --20 0 20 40 60 80 100 120 140 160
0
15
20
5
10
25
V
GS
=2.5V, I
D
=2.5A
V
GS
=4.5V, I
D
=5.0A
V
GS
=4.0V, I
D
=5.0A
V
GS
=3.1V, I
D
=5.0A
Gate to Source Voltage, V
GS
-- V
R
DS
(on) -- V
GS
Drain to Source Voltage, V
DS
-- V
I
D
-- V
DS
Drain Current, I
D
-- A
Gate to Source Voltage, V
GS
-- V
I
D
-- V
GS
Drain Current, I
D
-- A
Ambient Temperature, Ta
-- °C
R
DS
(on)
-- Ta
Drain Current, I
D
-- A
S/W Time -- I
D
Switching Time, S/W Time -- ns
Diode Forward Voltage, V
SD
-- V
Source Current, I
S
-- A
I
S
-- V
SD
Static Drain to Source
On-State Resistance, R
DS
(on) -- m
Ω
Static Drain to Source
On-State Resistance, R
DS
(on) -- m
Ω
0
0
4.0
8.0
2.0
6.0
10.0
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1.00.90.8 0 0.5 1.0 1.5 2.0 2.5
0.10 0.2 0.3 0.4 0.5 0.8 0.9 1.00.70.6
1.0
4.0
7.0
2.0
5.0
8.0
3.0
6.0
9.0
10.0
264810
0
5
10
15
25
20
30
40
35
V
DS
=10V
--25
°
C
Ta=75
°
C
V
GS
=1.5V
1.8V
2.5V
25
°
C
Ta=25°C
0.01
0.1
7
5
3
2
7
5
3
2
7
5
3
2
1.0
--25
°
C
25
°
C
Ta=75
°
C
V
GS
=0V
4.5V
10
7
5
3
2
100
4.0V
3.1V
I
D
=2.5A
5A
1k
7
5
3
2
10k
7
5
3
2
100
0.1
2
1.0
357
V
DD
=10V
V
GS
=4.5V
PW=10μs
t
d
(off)
t
r
t
f
10
23 57
t
d
(on)
100k
7
5
3
2
Total Gate Charge, Qg -- nC
Gate to Source Voltage, V
GS
-- V
V
GS
-- Qg
01234567
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.5
4.0
V
DS
=10V
I
D
=10A
Ta=25°C
Input Pulse Width
-- ms
S/W Time -- Input Pulse Width
Switching Time, S/W Time -- μs
1
10
0.1
0.01 1.0
0.1
V
DD
=10V
V
GS
=4.5V
I
D
=5A
t
d
(off)
t
r
t
f
100
10
t
d
(on)
10k
100
1k
P1-P3P4-P5

ECH8697R-TL-W

Mfr. #:
Buy ECH8697R-TL-W
Manufacturer:
ON Semiconductor
Description:
MOSFET NCH 2.5V COMMON-DRAIN
Lifecycle:
New from this manufacturer.
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