ECH8697R-TL-W

ECH8697R
www.onsemi.com
4
P
D
-- Ta
Power Dissipation, P
D
-- W
0
0
20 40
0.4
60 80 100 120 140 150
0.8
1.2
1.8
1.6
1.5
0.2
0.6
1.0
1.4
1unit
Total Dissipation
Surface mounted on ceramic substrate
(1000mm
2
×0.8mm)
Ambient Temperature, Ta -- °C
Thermal Resistance, R
θJA
-- ºC/W
0.01
0.1
Pulse Time, PT -- s
0.000001 0.00001
2
0.0001
357 2
0.001
35723 57
0.01
2
0.1
3
5
7
R
θJA
-- Pulse Time
23 57
1.0
2
10
357
23 57
0.1
0.05
0.02
0.01
Single Pulse
Duty Cycle=0.5
0.001
1.0
100
0.2
Surface mounted on ceramic substrate
(1000mm
2
×0.8mm) 1unit
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
2
3
5
7
S O A
Drain to Source Voltage, V
DS
-- V
Drain Current, I
D
-- A
0.1
1.0
0.01
0.01 0.1
5723 5723 57 723
1.0 10
100
23 5
Operation in this
area is limited by R
DS
(on).
100μs
100ms
DC operation
10ms
1ms
10
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
100
I
DP
=60A(PW
10μs)
I
D
=10A
Ta=25°C
Single pulse
Surface mounted on ceramic substrate
(1000mm
2
×0.8mm) 1unit
ECH8697R
www.onsemi.com
5
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SOT-28FL / ECH8
CASE 318BF
ISSUE O
to
PACKAGE DIMENSIONS
unit : mm
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
ORDERING INFORMATION
Device Marking Package Shipping (Qty / Packing)
ECH8697R-TL-W UU
SOT-28FL / ECH8
(Pb-Free / Halogen Free)
3,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
0.4
0.6
2.8
0.65
Recommended
Soldering Footprint
Note on usage : Since the ECH8697R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects. Please contact sales for use except the designated application.

ECH8697R-TL-W

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NCH 2.5V COMMON-DRAIN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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