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IRFTS9342TRPBF

P1-P3P4-P6P7-P8
www.irf.com 1
02/29/12
IRFTS9342PbF
HEXFET
®
Power MOSFET
Notes through are on page 2
Applications
l Battery operated DC motor inverter MOSFET
l System/Load Switch
Features and Benefits
Top View
1
2
D
G
A
D
D
D
S
3
4
5
6
TSOP-6
V
DS
-30 V
V
GS max
±
20 V
R
DS(on) max
(@V
GS
= -10V)
40
m
Ω
R
DS(on) max
(@V
GS
= -4.5V)
66
m
Ω
Q
g typ
12
nC
I
D
(@T
A
= 25°C)
-5.8 A
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 4.5V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 4.5V
I
DM
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
A
= 70°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
V
W
A
°C
Max.
-5.8
-46
±20
-30
-4.6
-55 to + 150
2.0
0.02
1.3
Note
Form
Quantity
IRFTS9342TRPbF
TSOP-6
Tape and Reel
3000
Orderable part number Package Type Standard Pack
Features
Benefits
Industry-Standard TSOP-6 Package
results in
Multi-Vendor Compatibility
RoHS Compliant Containing no Lead, no Bromide and no Halogen
⇒
Environmentally Friendlier
MSL1, Consumer Qualification
Increased Reliability
PD - 96411A
IRFTS9342PbF
2 www.irf.com
G
D
S
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JA
Junction-to-Ambient ––– 62.5 °C/W
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
BV
DSS
Drain-to-Source Breakdown Voltage -30 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 19 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 32 40
––– 53 66
V
GS(th)
Gate Threshold Voltage -1.3 ––– -2.4 V
Δ
V
GS(th)
Gate Threshold Voltage Coefficient ––– -5.5 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– -1.0
––– ––– -150
I
GSS
Gate-to-Source Forward Leakage ––– ––– -100
Gate-to-Source Reverse Leakage ––– ––– 100
gfs Forward Transconductance 6.8 ––– ––– S
Q
g
Total Gate Charge
––– 12 –––
Q
gs
Gate-to-Source Charge
––– 1.8 –––
Q
gd
Gate-to-Drain Charge
––– 3.1 –––
R
G
Gate Resistance ––– 17
–––
Ω
t
d(on)
Turn-On Delay Time ––– 4.6 –––
t
r
Rise Time ––– 13 –––
t
d(off)
Turn-Off Delay Time ––– 45 –––
t
f
Fall Time ––– 28 –––
C
iss
Input Capacitance ––– 595 –––
C
oss
Output Capacitance ––– 133 –––
C
rss
Reverse Transfer Capacitance ––– 85 –––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– -1.2 V
t
rr
Reverse Recovery Time ––– 20 30 ns
Q
rr
Reverse Recovery Charge ––– 11 17 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
V
DS
= V
GS
, I
D
= -25μA
V
GS
= -4.5V, I
D
= -4.6A
mΩ
V
DD
= -15V, V
GS
= -10V
V
DS
= -15V
R
G
= 6.8
Ω
V
DS
= -10V, I
D
= -4.6A
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
μA
I
D
= -4.6A
I
D
= -4.6A
V
GS
= 0V
V
DS
= -25V
V
DS
= -24V, V
GS
= 0V
T
J
= 25°C, I
F
= -4.6A, V
DD
= -24V
di/dt = 100A/μs
T
J
= 25°C, I
S
= -4.6A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Conditions
ƒ = 1.0KHz
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -5.8A
––– ––– -46
––– ––– -2.0
MOSFET symbol
nA
ns
A
pF
nC
V
GS
= -10V
V
GS
= -20V
V
GS
= 20V
IRFTS9342PbF
www.irf.com 3
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= -5.8A
V
GS
= -10V
1 10 100
-V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0246810121416
Q
G
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
-
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= -24V
V
DS
= -15V
V
DS
= -6.0V
I
D
= -4.6A
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP -10V
-7.0V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
BOTTOM -2.8V
≤
60μs PULSE WIDTH
Tj = 25°C
-2.8V
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
-2.8V
≤
60μs PULSE WIDTH
Tj = 150°C
VGS
TOP -10V
-7.0V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
BOTTOM -2.8V
1 2 3 4 5 6 7
-V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= -15V
≤60μs PULSE WIDTH
P1-P3P4-P6P7-P8

IRFTS9342TRPBF

Mfr. #:
Buy IRFTS9342TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET P-CHANNEL -30V -5.8A 40 mOhm
Lifecycle:
New from this manufacturer.
Delivery:
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