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Table 6. DC CHARACTERISTICS − 3.3 V VERSION
V
BB
= 5 V to 28 V; T
J
= −40°C to +150°C; unless otherwise specified.
Symbol UnitMaxTypMinConditionsParameter
DC CHARACTERISTICS − DIGITAL I/O PINS
PIN INH
DV
H
High level voltage drop I
INH
= 15 mA 0.35 0.75 V
I
leak
Leakage current Sleep mode; V
INH
= 0 V −1 1
mA
PIN EN
V
il
Low level input voltage 0.8 V
V
ih
High level input voltage 2.0 V
R
pd
Pull−down resistance to ground 50 200
kW
PIN RxD
V
ol
Low level output voltage I
sink
= 2 mA 0.65 V
V
oh
High level output voltage
(In Normal mode)
Normal mode,
I
source
= −2 mA
V
CC
0.65
V
R
pu
Pull−up resistance to V
CC
(In Standby and Sleep mode)
Standby mode,
Sleep mode
10
kW
PIN RSTN
V
ol
Low level output voltage I
sink
= 2 mA 0.65 V
R
pu
Pull−up resistance to V
CC
50 200
kW
DC CHARACTERISTICS
POWER−ON RESET
POR
H_VBB
V
BB
POR High level detection
threshold
4.5 V
POR
L_VBB
V
BB
POR Low level detection thresh-
old
1.7 3.8 V
POR
_VBB_sl
Maximum slope on V
BB
to guarantee
POR
2
V/ms
THERMAL SHUTDOWN
T
J_tsd
Thermal shutdown junction temper-
ature
For shutdown 165 195 °C
T
J_hyst
Thermal shutdown hysteresis 9 18 °C
12.Measured at output voltage V
CC_OUT
= (V
CC_OUT
@ V
BB
= 5 V) − 2%.
13.The voltage drop in Normal mode between LIN and V
BB
pin is the sum of the diode drop and the drop at serial pull−up resistor. The drop
at the switch is negligible. See Figure 2.
14.Guaranteed by design. Not tested
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Table 7. DC CHARACTERISTICS − 5 V VERSION
V
BB
= 6 V to 28 V; T
J
= −40°C to +150°C; unless otherwise specified.
Symbol
Parameter Conditions Min Typ Max Unit
DC CHARACTERISTICS SUPPLY − PINS V
BB
AND V
CC
I
BB_ON
Supply current Normal mode; LIN recessive 1.6 mA
I
BB_STB
Supply current Standby mode, V
BB
= 6 − 18 V,
T
J
< 105°C
60
mA
I
BB_SLP
Supply current Sleep mode, V
BB
= 6 − 18 V,
T
J
< 105°C
20
mA
DC CHARACTERISTICS − VOLTAGE REGULATOR
V
CC_OUT
Regulator output voltage
V
CC
load 0 − 100 mA 4.9 5 5.1 V
100 mA < V
CC
load < 150 mA 4.85 5 5.15 V
I
OUT_LIM
Overcurrent limitation 150 225 300 mA
V
CC_UV_THR
Undervoltage detection threshold 4.25 4.5 4.75 V
DV
CC_OUT
Line Regulation V
BB
6 − 28 V, I
out
= 5 mA
T
J
= 25°C
0.41 mV
Load Regulation I
out
1 − 100 mA, V
BB
= 14 V,
T
J
= 25°C
22 mV
V
do
Dropout Voltage (V
BB
− V
CC_OUT
)
(Note 15)
(Figure 20)
I
out
= 10 mA, T
J
= 25°C 22 mV
I
out
= 50 mA, T
J
= 25°C 108 mV
I
out
= 100 mA, T
J
= 25°C 216 mV
DC CHARACTERISTICS LIN TRANSMITTER
V
LIN_dom_LoSup
LIN dominant output voltage TxD = Low; V
BB
= 7.3 V 1.2 V
V
LIN_dom_HiSup
LIN dominant output voltage TxD = Low; V
BB
= 18 V 2.0 V
V
LIN_rec
LIN recessive output voltage
(Note 16)
TxD = High; I
LIN
= 10 mA
V
BB
1.5
V
BB
V
I
LIN_lim
Short circuit current limitation V
LIN
= V
BB(max)
40 200 mA
R
slave
Internal pull−up resistance 20 33 47
kW
C
LIN
Capacitance on pin LIN (Note 17) 25 35 pF
DC CHARACTERISTICS LIN RECEIVER
V
BUS_dom
bus voltage for dominant state 0.4 V
BB
V
BUS_rec
bus voltage for recessive state 0.6 V
BB
V
rec_dom
Receiver threshold LIN bus recessive dominant 0.4 0.6 V
BB
V
rec_rec
Receiver threshold LIN bus dominant recessive 0.4 0.6 V
BB
V
rec_cnt
Receiver center voltage (V
rec_dom
+ V
rec_rec
) / 2 0.475 0.525 V
BB
V
rec_hys
Receiver hysteresis (V
rec_rec
− V
rec_dom
) 0.05 0.175 V
BB
I
LIN_off_dom
LIN output current bus in dominant
state
Driver off; V
BB
= 12 V, V
LIN
= 0 V −1 mA
I
LIN_off_rec
LIN output current bus in recessive
state
Driver off; V
BB
< 18 V,
V
BB
< V
LIN
< 18 V
1
mA
I
LIN_no_GND
Communication not affected V
BB
= GND = 12 V;
0 < V
LIN
< 18 V
−1 1 mA
I
LIN_no_VBB
LIN bus remains operational V
BB
= GND = 0 V;
0 < V
LIN
< 18 V
5
mA
15.Measured at output voltage V
CC_OUT
= (V
CC_OUT
@ V
BB
= 6 V) − 2%.
16.The voltage drop in Normal mode between LIN and V
BB
pin is the sum of the diode drop and the drop at serial pull−up resistor. The drop
at the switch is negligible. See Figure 2.
17.Guaranteed by design. Not tested
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12
Table 7. DC CHARACTERISTICS − 5 V VERSION
V
BB
= 6 V to 28 V; T
J
= −40°C to +150°C; unless otherwise specified.
Symbol UnitMaxTypMinConditionsParameter
DC CHARACTERISTICS − DIGITAL I/O PINS
PIN WAKE
V
WAKE_TH
Threshold voltage 0.35 0.65 V
BB
I
leak
Input leakage current V
WAKE
= 0 V; V
BB
= 18 V −1 −0.5 1
mA
t
WAKE_MIN
Debounce time
Sleep mode; rising and falling
edge
8 54
ms
PINS TxD AND STB
V
il
Low level input voltage 0.8 V
V
ih
High level input voltage 2.0 V
R
pu
Pull−up resistance to V
CC
50 200
kW
PIN INH
DV
H
High level voltage drop I
INH
= 15 mA 0.35 0.75 V
I
leak
Leakage current Sleep mode; V
INH
= 0 V −1 1
mA
PIN EN
V
il
Low level input voltage 0.8 V
V
ih
High level input voltage 2.0 V
R
pd
Pull−down resistance to ground 50 200
kW
PIN RxD
V
ol
Low level output voltage I
sink
= 2 mA 0.65 V
V
oh
High level output voltage
(In Normal mode)
Normal mode, I
source
= −2 mA V
CC
0.65
V
R
pu
Pull−up resistance to V
CC
(In Standby and Sleep mode)
Standby mode, Sleep mode 10
kW
PIN RSTN
V
ol
Low level output voltage I
sink
= 2 mA 0.65 V
R
pu
Pull−up resistance to V
CC
50 200
kW
DC CHARACTERISTICS
POWER−ON RESET
POR
H_VBB
V
BB
POR High level detection
threshold
4.5 V
POR
L_VBB
V
BB
POR Low level detection
threshold
1.7 3.8 V
POR
_VBB_sl
Maximum slope on V
BB
to guarantee
POR
2
V/ms
THERMAL SHUTDOWN
T
J_tsd
Thermal shutdown junction
temperature
For shutdown 165 195 °C
T
J_hyst
Thermal shutdown hysteresis 9 18 °C
15.Measured at output voltage V
CC_OUT
= (V
CC_OUT
@ V
BB
= 6 V) − 2%.
16.The voltage drop in Normal mode between LIN and V
BB
pin is the sum of the diode drop and the drop at serial pull−up resistor. The drop
at the switch is negligible. See Figure 2.
17.Guaranteed by design. Not tested

NCV7425DW0G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
LIN Transceivers LIN WITH 3.3V 150MA LDO
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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