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NCV7425DW0G

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NCV7425
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7
undervoltage is detected. Output pin RSTN is pulled to Low
level to indicate the undervoltage condition to the external
load (a microcontroller). At the same time, the device enters
automatically the standby mode. As soon as the regulator
output returns above the undervoltage level, the RSTN Low
level is extended by typically 6ms and only then released to
High level in order to ensure microcontroller initialization
under correct supply conditions.
In the sleep mode, RSTN pin is kept Low regardless the
V
CC
level − it means that RSTN becomes Low immediately
at sleep mode entry even if the V
CC
capacitor is still charged.
In all situations where RSTN pin is kept Low, the digital
inputs to NCV7425 are discarded by the internal control
logic and have no effect on its behavior.
The RSTN pin function is illustrated in Figure 7.
Figure 7. RSTN Pin Behavior
Standby mode Normal mode Sleep modeNormal modeStandby mode
RSTN
ext
VBB
VCC
RSTN
EN
STB
POR
H_VBB
FB20130807.01
STB and EN levels discarded when RSTN=Low
RSTN
ext
V
CC_UV_deb
V
CC_UV_deb
V
CC_UV_deb
< V
CC_UV_deb
V
CC_UV_THR
NCV7425
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8
ELECTRICAL CHARACTERISTICS
Definitions
All voltages are referenced to GND. Positive currents flow into the IC.
Table 5. ABSOLUTE MAXIMUM RATINGS − 3.3 V and 5 V VERSIONS
Symbol Parameter Min. Max. Unit
V
BB
Battery voltage on pin V
BB
(Note 7) −0.3 +45 V
V
CC
DC voltage on pin V
CC
0 +6 V
I
VCC
Current delivered by the V
CC
regulator 150 mA
V
LIN
LIN bus voltage (Note 8) −45 +45 V
V
INH
DC voltage on inhibit pin −0.3 V
BB
+ 0.3 V
V
WAKE
Voltage on WAKE pin −45 45 V
V
Dig_IO
DC voltage on pins TxD, RxD, EN, STB, RSTN −0.3 V
CC
+ 0.3 V
T
J
Maximum junction temperature −40 +165 °C
V
esd
Electrostatic discharge voltage (INH, WAKE and V
BB
) system
Human Body Model (HBM) (Note 9)
−10 +10
kV
Electrostatic discharge voltage (LIN pin, no external capacitor) HBM (Note 9) −10 +10
Electrostatic discharge voltage (LIN pin, 220 pF) System HBM (Note 9) −15 +15
Electrostatic discharge voltage (pins LIN, INH, WAKE and V
BB
) HBM (Note 10) −8 +8
Electrostatic discharge voltage (other pins) HBM (Note 10) −4 +4
Electrostatic discharge voltage; charge device model (Note 11) −250 +250 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
7. The applied transients shall be in accordance with ISO 7637 part 1, test pulses 1, 2, 3a, 3b, and 5. The device complies with functional class
C; class A can be reached depending on the application and external components.
8. The applied transients shall be in accordance with ISO 7637 part 1, test pulses 1, 2, 3a, and 3b. The device complies with functional class
C; class A can be reached depending on the application and external components.
9. Equivalent to discharging a 150 pF capacitor through a 330 W resistor conform to IEC Standard 61000−4−2. The specified values are verified
by external test house.
10.Equivalent to discharging a 100 pF capacitor through a 1.5 kW resistor conform to MIL STD 883 method 3015.7.
11. Conform to EOS/ESD−DS5.3 (socket mode).
Table 6. DC CHARACTERISTICS − 3.3 V VERSION
V
BB
= 5 V to 28 V; T
J
= −40°C to +150°C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
DC CHARACTERISTICS SUPPLY − PINS V
BB
AND V
CC
I
BB_ON
Supply current Normal mode; LIN recessive 1.6 mA
I
BB_STB
Supply current Standby mode, V
BB
= 5 − 18 V,
T
J
< 105°C
60
mA
I
BB_SLP
Supply current Sleep mode, V
BB
= 5 − 18 V, T
J
< 105°C
20
mA
DC CHARACTERISTICS − VOLTAGE REGULATOR
V
CC_OUT
Regulator output voltage
V
CC
load 0 − 100 mA 3.234 3.30 3.366
V
100 mA < V
CC
load < 150 mA 3.201 3.30 3.399
I
OUT_LIM
Overcurrent limitation 150 225 300 mA
V
CC_UV_THR
Undervoltage detection threshold 2.80 2.97 3.13 V
12.Measured at output voltage V
CC_OUT
= (V
CC_OUT
@ V
BB
= 5 V) − 2%.
13.The voltage drop in Normal mode between LIN and V
BB
pin is the sum of the diode drop and the drop at serial pull−up resistor. The drop
at the switch is negligible. See Figure 2.
14.Guaranteed by design. Not tested
NCV7425
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9
Table 6. DC CHARACTERISTICS − 3.3 V VERSION
V
BB
= 5 V to 28 V; T
J
= −40°C to +150°C; unless otherwise specified.
Symbol UnitMaxTypMinConditionsParameter
DC CHARACTERISTICS − VOLTAGE REGULATOR
DV
CC_OUT
Line Regulation V
BB
5 − 28 V, I
out
= 5 mA
T
J
= 25°C
0.41
mV
Load Regulation I
out
1−100 mA,
V
BB
= 14 V, T
J
= 25°C
25
V
do
Dropout Voltage (V
BB
− V
CC_OUT
)
(Note 12) Figure 12
I
out
= 10 mA, T
J
= 25°C 22
mV
I
out
= 50 mA, T
J
= 25°C 108
I
out
= 100 mA, T
J
= 25°C 216
DC CHARACTERISTICS − LIN TRANSMITTER
V
LIN_dom_LoSup
LIN dominant output voltage TxD = Low; V
BB
= 7.3 V 1.2 V
V
LIN_dom_HiSup
LIN dominant output voltage TxD = Low; V
BB
= 18 V 2.0 V
V
LIN_rec
LIN recessive output voltage
(Note 13)
TxD = High; I
LIN
= 10 mA
V
BB
−
1.5
V
BB
V
I
LIN_lim
Short circuit current limitation V
LIN
= V
BB(max)
40 200 mA
R
slave
Internal pull−up resistance 20 33 47
kW
C
LIN
Capacitance on pin LIN (Note 14) 25 35 pF
DC CHARACTERISTICS − LIN RECEIVER
V
BUS_dom
bus voltage for dominant state 0.4 V
BB
V
BUS_rec
bus voltage for recessive state 0.6 V
BB
V
rec_dom
Receiver threshold LIN bus recessive → dominant 0.4 0.6 V
BB
V
rec_rec
Receiver threshold LIN bus dominant → recessive 0.4 0.6 V
BB
V
rec_cnt
Receiver centre voltage (V
rec_dom
+ V
rec_rec
) / 2 0.475 0.525 V
BB
V
rec_hys
Receiver hysteresis (V
rec_rec
− V
rec_dom
) 0.05 0.175 V
BB
I
LIN_off_dom
LIN output current bus in dominant
state
Driver off; V
BB
= 12 V, V
LIN
= 0 V −1 mA
I
LIN_off_rec
LIN output current bus in recessive
state
Driver off; V
BB
< 18 V,
V
BB
< V
LIN
< 18 V
1
mA
I
LIN_no_GND
Communication not affected V
BB
= GND = 12 V;
0 < V
LIN
< 18 V
−1 1 mA
I
LIN_no_VBB
LIN bus remains operational V
BB
= GND = 0 V;
0 < V
LIN
< 18 V
5
mA
DC CHARACTERISTICS − DIGITAL I/O PINS
PIN WAKE
V
WAKE_TH
Threshold voltage 0.35 0.65 V
BB
I
leak
Input leakage current V
WAKE
= 0 V; V
BB
= 18 V −1 −0.5 1
mA
t
WAKE(min)
Debounce time Sleep mode; rising and falling
edge
8 54
ms
PINS TxD AND STB
V
il
Low level input voltage 0.8 V
V
ih
High level input voltage 2.0 V
R
pu
Pull−up resistance to V
CC
50 200
kW
12.Measured at output voltage V
CC_OUT
= (V
CC_OUT
@ V
BB
= 5 V) − 2%.
13.The voltage drop in Normal mode between LIN and V
BB
pin is the sum of the diode drop and the drop at serial pull−up resistor. The drop
at the switch is negligible. See Figure 2.
14.Guaranteed by design. Not tested
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NCV7425DW0G

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Buy NCV7425DW0G
Manufacturer:
ON Semiconductor
Description:
LIN Transceivers LIN WITH 3.3V 150MA LDO
Lifecycle:
New from this manufacturer.
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