19
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AT49SV163D(T)
18. AC Read Waveforms
(1)(2)(3)(4)
Notes: 1. CE may be delayed up to t
ACC
- t
CE
after the address transition without impact on t
ACC
.
2. OE
may be delayed up to t
CE
- t
OE
after the falling edge of CE without impact on t
CE
or by t
ACC
- t
OE
after an address change
without impact on t
ACC
.
3. t
DF
is specified from OE or CE, whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
17. AC Read Characteristics
Symbol Parameter
AT49SV163D(T)-80
UnitsMin Max
t
RC
Read Cycle Time 80 ns
t
ACC
Address to Output Delay 80 ns
t
CE
(1)
CE to Output Delay 80 ns
t
OE
(2)
OE to Output Delay 0 35 ns
t
DF
(3)(4)
CE or OE to Output Float 0 25 ns
t
OH
Output Hold from OE, CE or Address,
whichever occurred first
0ns
t
RO
RESET to Output Delay 100 ns
OUTPUT
VALID
OUTPUT
HIGH Z
RESET
OE
t
OE
t
CE
ADDRESS VALID
t
DF
t
OH
t
ACC
t
RO
CE
ADDRESS
t
RC
20
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AT49SV163D(T)
20. AC Word Load Waveforms
20.1 WE Controlled
20.2 CE Controlled
19. AC Word Load Characteristics
Symbol Parameter Min Max Units
t
AS
, t
OES
Address, OE Setup Time 0 ns
t
AH
Address Hold Time 25 ns
t
CS
Chip Select Setup Time 0 ns
t
CH
Chip Select Hold Time 0 ns
t
WP
Write Pulse Width (WE or CE)35 ns
t
WPH
Write Pulse Width High 15 ns
t
DS
Data Setup Time 25 ns
t
DH
, t
OEH
Data, OE Hold Time 0 ns
21
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AT49SV163D(T)
22. Program Cycle Waveforms
23. Sector or Chip Erase Cycle Waveforms
Notes: 1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 555. For sector erase, the address depends on what sector is to be erased.
(See note 3 under “Command Definition Table” on page 12.)
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
21. Program Cycle Characteristics
Symbol Parameter Min Typ Max Units
t
BP
Word Programming Time 10 120 µs
t
BPD
Word Programming Time in Dual Programming Mode 5 60 µs
t
AS
Address Setup Time 0 ns
t
AH
Address Hold Time 25 ns
t
DS
Data Setup Time 25 ns
t
DH
Data Hold Time 0 ns
t
WP
Write Pulse Width 35 ns
t
WPH
Write Pulse Width High 15 ns
t
WC
Write Cycle Time 70 ns
t
RP
Reset Pulse Width 500 ns
t
EC
Chip Erase Cycle Time 16 seconds
t
SEC1
Sector Erase Cycle Time (4K Word Sectors) 0.1 2.0 seconds
t
SEC2
Sector Erase Cycle Time (32K Word Sectors) 0.5 6.0 seconds
t
ES
Erase Suspend Time 15 µs
t
PS
Program Suspend Time 10 µs
OE
PROGRAM CYCLE
INPUT
DATA
ADDRESS
A0
55
555 555
AA
AAA
t
BP
t
WPH
t
WP
CE
WE
A0 - A19
DATA
t
AS
t
AH
t
DH
t
DS
555
AA
t
WC
OE
(1)
AA
80
Note 3
55 55
555
555
Note 2
AA
WORD 0
WORD 1 WORD 2
WORD 3
WORD 4
WORD 5
AAA AAA
t
WPH
t
WP
CE
WE
A0-A19
DATA
t
AS
t
AH
t
EC
t
DH
t
DS
555
t
WC

AT49SV163D-80TU

Mfr. #:
Manufacturer:
Microchip Technology / Atmel
Description:
NOR Flash Parallel Flash 1.8V 80NS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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