OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SIT9005AI-21-33ED37.125000E

P1-P3P4-P6P7-P9
SiT
9005
1 to 141 MHz EMI Reduction Oscillator
Rev 1.0
September 25, 2017
www.sitime.com
Features
Spread spectrum for EMI reduction
Wide spread % option
Center spread: from ±0.125% to ±2%, ±0.125% step size
Down spread: -0.25% to -4% with -0.25% step size
Spread profile option: Triangular, Hershey-kiss
Programmable rise/fall time for EMI reduction: 8 options,
0.25 to 40 ns
Any frequency between 1 MHz and 141 MHz accurate to
6 decimal places
100% pin-to-pin drop-in replacement to quartz-based XO’s
Excellent total frequency stability as low as ±20 ppm
Operating temperature from -40°C to 85°C.
Low power consumption of 4.0 mA typical at 1.8V
Pin1 modes: Standby, output enable, or spread disable
Fast startup time of 5 ms
LVCMOS output
Industry-standard packages
QFN: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5 mm
2
Contact SiTime for SOT23-5 (2.9 x 2.8 mm
2
)
RoHS and REACH compliant, Pb-free, Halogen-free
and Antimony-free
Applications
Surveillance camera
IP camera
Industrial motors
Flat panels
Multi function printers
PCI express
Electrical Specifications
Table 1. Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated.
Typical values
are at 25°C and 3.3V supply voltage.
Parameters
Symbol
Typ.
Max.
Unit
Condition
Frequency Range
Output Frequency Range
f
1
–
141 MHz
Frequency Stability and Aging
Frequency Stability F_stab
–
+20
ppm
Inclusive of initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply
voltage. Spread = Off.
–
+25
ppm
–
+50
ppm
Operating Temperature Range
Operating Temperature Range T_use
–
+70
°C
Extended Commercial
–
+85
°C
Industrial
Supply Voltage and Current Consumption
Supply Voltage Vdd
1.8
1.98
V
2.25 2.5 2.75
V
2.8
3.08
V
3.0
3.3
V
3.3
3.63
V
–
3.63
V
Current Consumption Idd
–
5.6 6.5 mA No load condition, f = 40 MHz, Vdd = 2.5V to 3.3V
5.0
5.5
mA
No load condition, f = 40 MHz, Vdd = 1.8V
OE Disable Current I_OD
–
5.0 6.5 mA f = 40 MHz, Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z
state
4.6
5.2
mA
f = 40 MHz, Vdd = 1.8V, OE = GND, Output in high-Z state
Standby Current I_std
2.1
4.3
µ
A
ST
= GND, Vdd = 2.5V to 3.3V, Output is weakly pulled down
0.4
1.5
µA
ST
= GND, Vdd = 1.8V, Output is weakly pulled down
SiT9005
1 to 141 MHz EMI Reduction Oscillator
Rev 1.0
Page 2 of 9
www.sitime.com
Table 1. Electrical Characteristics (continued)
Parameters
Symbol
Min.
Typ.
Max.
Unit
Condition
LVCMOS Output Characteristics
Duty Cycle
DC
45
–
55
%
Rise/Fall Time Tr, Tf – 1 2 ns
Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%, default derive
strength
–
1.3
2.5
ns
Vdd =1.8V, 20% - 80%, default derive strength
– – 2 ns Vdd = 2.25V - 3.63V, 20% - 80%, default derive strength
Output High Voltage VOH 90% – – Vdd
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
Output Low Voltage VOL – – 10% Vdd
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Input Characteristics
Input High Voltage VIH 70% – – Vdd
Pin 1, OE or
ST
Input Low Voltage VIL – – 30% Vdd
Pin 1, OE or
ST
Input Pull-up Impedance Z_in 50 87 150
kΩ
Pin 1, OE logic high or logic low, or
ST
logic high
2 – –
MΩ
Pin 1,
ST
logic low
Startup and Resume Timing
Startup Time
T_start
–
–
5
ms
Measured from the time Vdd reaches its rated minimum value
Enable/Disable Time
T_oe
–
–
180
ns
f = 40 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
Resume Time
T_resume – – 5 ms Measured from the time ST pin crosses 50% threshold
Spread Enable Time T_sde
– – 4
µs
Measured from the time SD pin crosses 50% threshold
Spread Disable Time T_sdde
– – 50
µs
Measured from the time SD pin crosses 50% threshold
Jitter
Cycle-to-cycle jitter T_ccj
–
10.5
15
ps
f = 40 MHz, Vdd = 2.5 to 3.3V, Spread = ON( or OFF)
–
8.5
12
ps
f = 40 MHz, Vdd = 3.3V, Spread = ON( or OFF)
–
12.5
22
ps
f = 40 MHz, Vdd = 1.8V, Spread = ON( or OFF)
Table 2. Spread Spectrum %
[1,2]
Ordering
Code
Center Spread
(%)
Down Spread
(%)
A ±0.125 -0.25
B ±0.250 -0.50
C ±0.390 -0.78
D ±0.515 -1.04
E ±0.640 -1.29
F ±0.765 -1.55
G ±0.905 -1.84
H ±1.030 -2.10
I ±1.155 -2.36
J ±1.280 -2.62
K ±1.420 -2.91
L ±1.545 -3.18
M ±1.670 -3.45
N ±1.795 -3.71
O ±1.935 -4.01
P ±2.060 -4.28
Notes:
1. In both center spread and down spread modes, modulation rate
is employed with a frequency of ~31.25 kHz.
2. Contact SiTime for wider spread options
Table 3. Spread Profile
Spread Profile
Triangular
Hershey-kiss
SiT9005
1 to 141 MHz EMI Reduction Oscillator
Rev 1.0
Page 3 of 9
www.sitime.com
Table 4. Pin Description
Pin
Symbol
Functionality
1
OE/
ST
/
NC/SD
Output
Enable
H
[3]
: specified frequency output
L: output is high impedance. Only output driver is disabled.
Standby
H
[3]
: specified frequency output
L: output is low (week pull down). Device goes to sleep mode.
Supply current reduced to I_std.
No
Connect
Pin1 has no function (Any voltage between 0 and Vdd or Open)
Spread
Disable
H: Spread = ON
L: Spread = OFF
2 GND Power Electrical ground
3 OUT Output Oscillator output
4 VDD Power
Power supply voltage
[4]
Top View
Figure 1. Pin Assignments
Notes:
3. In OE or
ST
mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven.
If pin 1 needs to be left floating, use the NC option.
4. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Table 5. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter Min. Max. Unit
Storage Temperature -65 150 °C
Vdd -0.5
4
V
Electrostatic Discharge
–
2000
V
Soldering Temperature (follow standard Pb free
soldering guidelines)
–
260 °C
Junction Temperature
[5]
–
150 °C
Note:
5. Exceeding this temperature for extended period of time may damage the device.
Table 6. Maximum Operating Junction Temperature
[6]
Max Operating Temperature (ambient)
Maximum Operating Junction Temperature
70°C 80°C
85°C 95°C
Note:
6. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 7. Environmental Compliance
Parameter Condition/Test Method
Mechanical Shock MIL-STD-883F, Method 2002
Mechanical Vibration MIL-STD-883F, Method 2007
Temperature Cycle JESD22, Method A104
Solderability MIL-STD-883F, Method 2003
Moisture Sensitivity Level
MSL1 @ 260°C
1
2
3
4
VDD
OUT
GND
OE/ /
NC/SD
P1-P3P4-P6P7-P9

SIT9005AI-21-33ED37.125000E

Mfr. #:
Buy SIT9005AI-21-33ED37.125000E
Manufacturer:
Description:
Oscillator MEMS 37.125MHz ±20ppm (Stability) 15pF LVCMOS 55% 3.3V 4-Pin QFN SMD T/R
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet