August 2006 Rev 4 1/15
15
STP5NK80Z
STP5NK80ZFP
N-channel 800V - 1.9 - 4.3A - TO-220/TO-220FP
Zener-protected SuperMESH™ Power MOSFET
General features
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
Switching application
Internal schematic diagram
Type
V
DSS
(@Tjmax)
R
DS(on)
I
D
STP5NK80Z 800 V < 2.4 4.3 A
STP5NK80ZFP 800 V < 2.4 4.3 A
1
2
3
TO-220FPTO-220
www.st.com
Order codes
Part number Marking Package Packaging
STP5NK80Z P5NK80Z TO-220 Tube
STP5NK80ZFP P5NK80ZFP TO-220FP Tube
Contents STP5NK80Z - STP5NK80ZFP
2/15
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STP5NK80Z - STP5NK80ZFP Electrical ratings
3/15
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
TO-220 TO-220FP
V
DS
Drain-source voltage (V
GS
= 0) 800 V
V
GS
Gate-source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25°C 4.3
4.3
(1)
1. Limited only by maximum temperature allowed
A
I
D
Drain current (continuous) at T
C
=100°C 2.7
2.7
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 17.2
17.2
(1)
A
P
TOT
Total dissipation at T
C
= 25°C 110 30 W
Derating factor 0.88 0.24 W/°C
V
ESD(G-S)
Gate source ESD
(HBM-C=100pF, R=1.5ΚΩ)
3500 V
dv/dt
(3)
3. I
SD
4.3A, di/dt 200A/µs, V
DD
V
(BR)DSS
, T
j
T
JMAX.
Peak diode recovery voltage slope 4.5 V/ns
V
ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s; T
c
= 25°C)
-2500V
T
J
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 2. Thermal data
Symbol Parameter Value Unit
TO-220 TO-220FP
R
thj-case
Thermal resistance junction-case max 1.14 4.2 °C/W
R
thj-a
Thermal resistance junction-ambient max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C

STP5NK80Z

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 800 Volt 4.3 A Zener SuperMESH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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