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STP5NK80Z

P1-P3P4-P6P7-P9P10-P12P13-P15
Electrical ratings STP5NK80Z - STP5NK80ZFP
4/15
1.1 Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
4.3 A
E
AS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
190 mJ
Table 4. Gate-source zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BV
GSO
Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30 V
STP5NK80Z - STP5NK80ZFP Electrical characteristics
5/15
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1mA, V
GS
= 0 800 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating,
Tc = 125°C
1
50
µA
µA
I
GSS
Gate body leakage current
(V
GS
= 0)
V
GS
= ± 20V ±10 µA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 100µA 3 3.75 4.5 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 2.15 A 1.9 2.4 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance V
DS
=15V, I
D
= 2.15A 4.25 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
910
98
20
pF
pF
pF
C
osseq
(2)
.
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance
V
GS
=0, V
DS
=0V to 400V 40 pF
t
d(on)
t
r
t
d(off)
t
r
Turn-on delay time
Rise time
Turn-on delay time
fall time
V
DD
=400 V, I
D
= 2 A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 18)
18
25
45
30
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=640V, I
D
= 4.3A
V
GS
=10V
32.4
5
18.5
45.5 nC
nC
nC
t
d(Voff)
t
r
Off-voltage rise time
Fall time
Cross-over time
V
DD
=640 V, I
D
= 4.3 A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 20)
22
10
32
ns
ns
ns
Electrical characteristics STP5NK80Z - STP5NK80ZFP
6/15
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current 4.3 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 17.2 A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage I
SD
= 4.3 A, V
GS
=0 1.6 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 4.3 A,
di/dt = 100A/µs,
V
DD
=40 V, Tj = 150°C
(see Figure 20)
500
3
12
ns
µC
A
P1-P3P4-P6P7-P9P10-P12P13-P15

STP5NK80Z

Mfr. #:
Buy STP5NK80Z
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 800 Volt 4.3 A Zener SuperMESH
Lifecycle:
New from this manufacturer.
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