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IRGB10B60KDPBF
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
IRG/B/S/SL10B60KDPbF
4
www.irf.com
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80
μ
s
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80
μ
s
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80
μ
s
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 80
μ
s
0123
45
6
V
CE
(V
)
0
5
10
15
20
25
30
35
40
I
C
E
(
A
)
V
GE
=
18V
V
G
E =
15V
V
G
E =
12V
V
G
E =
10V
V
G
E =
8.
0V
0123
45
6
V
CE
(V
)
0
5
10
15
20
25
30
35
40
I
C
E
(
A
)
V
GE
=
18V
V
G
E =
15V
V
G
E =
12V
V
G
E =
10V
V
G
E =
8.
0V
0.0
0.5
1.0
1.
5
2.
0
2.5
3.0
V
F
(V
)
0
5
10
15
20
25
30
35
40
I
F
(
A
)
-
40°C
25°C
150°C
012345
6
V
CE
(V)
0
5
10
15
20
25
30
35
40
I
C
E
(
A
)
V
GE
= 18V
VGE = 15
V
VGE = 12
V
VGE = 10
V
VGE = 8.0
V
IRG/B/S/SL10B60KDPbF
www.irf.com
5
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 150°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10
μ
s
5
1
01
52
0
V
GE
(V
)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 5.
0A
I
CE
= 10A
I
CE
= 15A
51
0
1
5
2
0
V
GE
(V
)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 5
.0A
I
CE
= 10A
I
CE
= 15A
0
5
10
15
20
V
GE
(V
)
0
10
20
30
40
50
60
70
80
I
C
E
(
A
)
T
J
=
25°C
T
J
= 150°C
T
J
= 150°C
T
J
= 25°C
51
0
1
5
2
0
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 5.
0A
I
CE
= 10A
I
CE
= 15A
IRG/B/S/SL10B60KDPbF
6
www.irf.com
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 150°C; L=200
μ
H; V
CE
= 400V
R
G
= 47
Ω
; V
GE
= 15V
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 150°C; L=200
μ
H; V
CE
= 400V
R
G
= 47
Ω
; V
GE
= 15V
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 150°C; L=200
μ
H; V
CE
= 400V
I
CE
= 10A; V
GE
= 15V
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 150°C; L=200
μ
H; V
CE
= 400V
I
CE
= 10A; V
GE
= 15V
0
50
100
150
R
G
(
Ω
)
0
50
100
150
200
250
300
350
400
450
500
E
n
e
r
g
y
(
μ
J
)
E
ON
E
OF
F
0
5
10
15
20
25
I
C
(A)
0
100
200
300
400
500
600
700
800
E
n
e
r
g
y
(
μ
J
)
E
OFF
E
ON
0
5
10
15
20
25
I
C
(A)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0
50
100
150
R
G
(
Ω
)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
IRGB10B60KDPBF
Mfr. #:
Buy IRGB10B60KDPBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V UltraFast 10-30kHz
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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