OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IRGB10B60KDPBF

P1-P3P4-P6P7-P9P10-P12P13-P15
IRG/B/S/SL10B60KDPbF
www.irf.com 7
Fig. 17 - Typical Diode I
RR
vs. I
F
T
J
= 150°C
Fig. 18 - Typical Diode I
RR
vs. R
G
T
J
= 150°C; I
F
= 10A
Fig. 20 - Typical Diode Q
RR
V
CC
= 400V; V
GE
= 15V;T
J
= 150°C
Fig. 19- Typical Diode I
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V;
I
CE
= 10A; T
J
= 150°C
0 50 100 150
R
G
(
Ω)
0
5
10
15
20
25
I
R
R
(
A
)
0 500 1000 1500
di
F
/dt (A/μs)
0
5
10
15
20
25
I
R
R
(
A
)
0 5 10 15 20 25
I
F
(A)
0
5
10
15
20
25
I
R
R
(
A
)
R
G =
10
Ω
R
G =
22
Ω
R
G =
47
Ω
R
G =
100
Ω
0 500 1000 1500
di
F
/dt (A/μs)
400
500
600
700
800
900
1000
1100
1200
Q
R
R
(
n
C
)
22
Ω
47
Ω
100 Ω
10
Ω
20A
10A
5.0A
IRG/B/S/SL10B60KDPbF
8 www.irf.com
Fig. 21 - Typical Diode E
RR
vs. I
F
T
J
= 150°C
Fig. 23 - Typical Gate Charge
vs. V
GE
I
CE
= 10A; L = 600μH
Fig. 22- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
0 5 10 15 20 25
I
F
(A)
0
50
100
150
200
250
300
350
400
450
E
n
e
r
g
y
(
μ
J
)
22
Ω
10
Ω
47
Ω
100
Ω
0 10203040
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
(
V
)
300V
400V
1 10 100
V
CE
(V)
10
100
1000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
IRG/B/S/SL10B60KDPbF
www.irf.com 9
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.285 0.000134
0.241 0.000565
0.288 0.0083
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
C
Ci= τi/Ri
Ri (°C/W) τi (sec)
0.846 0.000149
1.830 0.001575
1.143 0.027005
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
C
Ci= τi/Ri
P1-P3P4-P6P7-P9P10-P12P13-P15

IRGB10B60KDPBF

Mfr. #:
Buy IRGB10B60KDPBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V UltraFast 10-30kHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet