April 2009 Doc ID 9103 Rev 4 1/13
13
STD2NC45-1
N-channel 450 V, 4.1 , 1.5 A, IPAK
SuperMESH™ Power MOSFET
Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
New high voltage benchmark
Application
Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.
Figure 1. Internal schematic diagram
3
2
1
IPAK
Table 1. Device summary
Order code Marking Package Packaging
STD2NC45-1 D2NC45 IPAK Tube
www.st.com
Contents STD2NC45-1
2/13 Doc ID 9103 Rev 4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STD2NC45-1 Electrical ratings
Doc ID 9103 Rev 4 3/13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 450 V
V
GS
Gate- source voltage ±30 V
I
D
Drain current (continuous) at T
C
= 25°C 1.5 A
I
D
Drain current (continuous) at T
C
= 100°C 0.95 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 6 A
P
TOT
Total dissipation at T
C
= 25°C 30 W
Derating factor 0.24 W/°C
dv/dt
(2)
2. I
SD
< 0.5A, di/dt < 100 A/µs, V
DD
=80% V
(BR)DSS
Peak diode recovery voltage slope 3 V/ns
T
stg
Storage temperature
–65 to 150
°C
T
j
Max. operating junction temperature °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 4.1 °C/W
Rthj-amb Thermal resistance junction-ambient max 100 °C/W
T
l
Maximum lead temperature for soldering purpose 275 °C
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
1.5 A
E
AS
Single pulse avalanche energy
(starting Tj=25°C, I
D
=I
AS
, V
DD
=50V)
25 mJ

STD2NC45-1

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch, 450V-4.1ohms 1.5A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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