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STD2NC45-1
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
Electrical ch
aracteristics
STD2NC45-1
4/13
Doc ID 9103 Re
v 4
2 Electrical
characteristics
(T
CASE
= 25°C unless othe
rwise specified)
T
able 5.
On/off states
Symbol
Parameter
T
est conditions
Min.
T
yp.
Max.
Unit
V
(BR)DSS
Drain-source
breakdown v
oltage
I
D
= 250µA, V
GS
= 0
450
V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating, T
C
= 125°C
1
50
µA
µA
I
GSS
Gate-body l
eakage
current (V
DS
= 0)
V
GS
= ± 30V
±100
nA
V
GS(th)
Gate threshold v
oltage
V
DS
= V
GS
, I
D
= 250µA
2.3
3
3.7
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V
, I
D
= 0.5A
4.1
4.5
Ω
T
able 6.
Dynamic
Symbol
Parameter
T
est conditions
Min.
T
yp.
Max.
Unit
g
fs
(1)
1.
Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
F
orward transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 0.5A
-1
.
1
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Rev
erse transf
er
capacitance
V
DS
= 25V
, f = 1 MHz, V
GS
= 0
-
160
27.5
4.7
pF
pF
pF
Q
g
Q
gs
Q
gd
T
otal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 360V
, I
D
= 1.5A,
V
GS
= 10V
, R
G
=4
.
7
Ω
(see Figure 17)
-
7
1.3
3.2
10
nC
nC
nC
T
able 7.
Switching ti
mes
Symbol
P
arameter
T
est conditions
Min.
T
yp.
Max.
Unit
t
d(on)
t
r
T
urn-on delay time
Rise time
V
DD
= 225V
, I
D
= 0.5A
R
G
=4
.
7
Ω
V
GS
= 10V
(see Figure 16)
-
6.7
4
-
ns
ns
t
r(V
off)
t
f
t
c
Off-voltage rise
time
F
all time
Cross-ov
er time
V
DD
= 360V
, I
D
= 1.5A,
R
G
=4
.
7
Ω,
V
GS
= 10V
(see Figure 16)
-
8.5
12
18
-
ns
ns
ns
STD2NC45-1
El
ectrical chara
cteristics
Doc ID 9103 Rev 4
5/13
T
able 8.
Source drain diode
Symbol
P
arameter
T
est conditions
Min.
T
yp.
Max.
Unit
I
SD
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)
-
1.5
6.0
A
A
V
SD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
F
orward on voltage
I
SD
= 1.5A, V
GS
= 0
-
1.6
V
t
rr
Q
rr
I
RRM
Re
verse recov
er
y time
Rev
erse recov
er
y charge
Re
verse recov
ery current
I
SD
= 1.5A, di/dt = 100A/µs
V
DD
= 100V
, T
j
= 150°C
(see Figure 21)
-
225
530
4.7
ns
µC
A
Electrical ch
aracteristics
STD2NC45-1
6/13
Doc ID 9103 Re
v 4
2.1 Electrical
characteri
stics (curves)
Figure 2.
Safe opera
ting area for IP
AK
Figure 3.
Thermal impedance f
or IP
AK
Figure 4.
Output c
haracteristics
Figure 5.
T
ransfer ch
aracteristics
Figure 6.
T
ransconduct
ance
Figure 7.
Static drain-s
ource on r
esistance
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
STD2NC45-1
Mfr. #:
Buy STD2NC45-1
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch, 450V-4.1ohms 1.5A
Lifecycle:
New from this manufacturer.
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STD2NC45-1