Electrical characteristics STD2NC45-1
4/13 Doc ID 9103 Rev 4
2 Electrical characteristics
(T
CASE
= 25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 250µA, V
GS
= 0 450 V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating, T
C
= 125°C
1
50
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 30V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250µA 2.3 3 3.7 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 0.5A 4.1 4.5
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Forward transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 0.5A
-1.1 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0 -
160
27.5
4.7
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 360V, I
D
= 1.5A,
V
GS
= 10V, R
G
=4.7
(see Figure 17)
-
7
1.3
3.2
10
nC
nC
nC
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 225V, I
D
= 0.5A
R
G
=4.7 V
GS
= 10V
(see Figure 16)
-
6.7
4
-
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage rise time
Fall time
Cross-over time
V
DD
= 360V, I
D
= 1.5A,
R
G
=4.7Ω, V
GS
= 10V
(see Figure 16)
-
8.5
12
18
-
ns
ns
ns
STD2NC45-1 Electrical characteristics
Doc ID 9103 Rev 4 5/13
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)
-
1.5
6.0
A
A
V
SD
(2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage I
SD
= 1.5A, V
GS
= 0 - 1.6 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 1.5A, di/dt = 100A/µs
V
DD
= 100V, T
j
= 150°C
(see Figure 21)
-
225
530
4.7
ns
µC
A
Electrical characteristics STD2NC45-1
6/13 Doc ID 9103 Rev 4
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for IPAK Figure 3. Thermal impedance for IPAK
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance

STD2NC45-1

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch, 450V-4.1ohms 1.5A
Lifecycle:
New from this manufacturer.
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