OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IDD12SG60CXTMA1

P1-P3P4-P6P7-P7
IDD12SG60C
3
rd
Generation thinQ!
TM
SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target applications
thinQ! 3G Diode designed for fast switching applications like:
Maximum ratings
Parameter Symbol Conditions Unit
Continuous forward current
I
F
T
C
<130 °C
12 A
I
F,SM
T
C
=25 °C, t
p
=10 ms
59
T
C
=150 °C, t
p
=10 ms
51
Non-repetitive peak forward current
I
F,max
T
C
=25 °C, t
p
=10 µs
430
∫i
2
dt
T
C
=25 °C, t
p
=10 ms
17
A
2
s
T
C
=150 °C, t
p
=10 ms
12
Repetitive peak reverse voltage
V
RRM
T
j
=25 °C
600 V
Diode dv/dt ruggedness
dv/ dt
V
R
= 0….480 V
50 V/ns
Power dissipation
P
tot
T
C
=25 °C
125 W
Operating and storage temperature
T
j
, T
stg
-55 ... 175 °C
Soldering temperature, reflow
soldering (max)
T
sold
reflow MSL1 260
• Breakdown voltage tested at 20mA
2)
• Optimized for high temperature operation
• Lowest Figure of Merit Q
C
/I
F
i²t value
Value
Surge non-repetitive forward current,
sine halfwave
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
V
DC
600 V
Q
C
19 nC
I
F
; T
C
< 130 °C 12 A
Product Summary
Type Package Marking Pin 1 Pin 2 Pin 3
IDD12SG60C PG-TO252-3 D12G60C n.c. A C
Rev. 2.4 page 1 2012-12-12
IDD12SG60C
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 1.2 K/W
R
thJA
SMD version, device
on PCB, minimal
footprint
--75
SMD version, device
on PCB, 6 cm
2
cooling
area
5)
-50-
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V
DC
I
R
=0.05 mA, T
j
=25 °C
600 - - V
Diode forward voltage
V
F
I
F
=12 A, T
j
=25 °C
- 1.8 2.1
I
F
=12 A, T
j
=150 °C
- 2.2 -
Reverse current
I
R
V
R
=600 V, T
j
=25 °C
- 1 100 µA
V
R
=600 V, T
j
=150 °C
- 4 1000
AC characteristics
Total capacitive charge
Q
c
-19-nC
Switching time
3)
t
c
- - <10 ns
Total capacitance
C
V
R
=1 V, f=1 MHz
- 310 - pF
V
R
=300 V, f=1 MHz
-50-
V
R
=600 V, f=1 MHz
-50-
1)
J-STD20 and JESD22
Values
V
R
=400 V,I
F
≤I
F,max
,
di
F
/dt=200 A/µs,
T
j
=150 °C
Thermal resistance, junction -
ambient
6)
Only capacitive charge occuring, guaranteed by design.
4)
Under worst case Z
th
conditions.
5)
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air
2)
All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA.
3)
t
c
is the time constant for the capacitive displacement current waveform (independent from T
j
, I
LOAD
and
di/dt), different from t
rr
which is dependent on T
j
, I
LOAD
and di/dt. No reverse recovery time constant t
rr
due
to absence of minority carrier injection.
Rev. 2.4 page 2 2012-12-12
IDD12SG60C
1 Power dissipation 2 Diode forward current
P
tot
=f(T
C
); parameter: R
thJC(max)
I
F
=f(T
C
)
4)
; T
j
≤175 °C; parameter: D = t
p
/T
3 Typ. forward characteristic 4 Typ. forward characteristic in surge current
mode
I
F
=f(V
F
); t
p
=400 µs; parameter:T
j
I
F
=f(V
F
); t
p
=400 µs; parameter: T
j
0
10
20
30
40
50
60
70
80
90
100
110
120
130
25 50 75 100 125 150 175
P
tot
[W]
T
C
[°C]
-55 °C
25 °C
100 °C
150 °C
175 °C
0
5
10
15
20
01234
I
F
[A]
V
F
[V]
-55 °C
25 °C
100 °C
150 °C
175 °C
0
20
40
60
80
02468
I
F
[A]
V
F
[V]
0
25
50
75
100
125
25 50 75 100 125 150 175
I
F
[A]
T
C
[°C]
0.1
0.3
0.5
0.7
1
2009-08-04Rev. 2.4 page 3
P1-P3P4-P6P7-P7

IDD12SG60CXTMA1

Mfr. #:
Buy IDD12SG60CXTMA1
Manufacturer:
Infineon Technologies
Description:
Schottky Diodes & Rectifiers SIC DIODEN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet