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IDD12SG60CXTMA1

P1-P3P4-P6P7-P7
IDD12SG60C
5 Typ. capacitance charge vs. current slope 6 Typ. reverse current vs. reverse voltage
Q
C
=f(di
F
/dt)
6)
; I
F
≤I
F,max
I
R
=f(V
R
); parameter: T
j
7 Typ. transient thermal impedance 8 Typ. capacitance vs. reverse voltage
Z
thJC
=f(t
p
); parameter: D = t
P
/T C=f(V
R
); T
C
=25 °C, f=1 MHz
10
-1
10
0
10
1
10
2
10
3
0
50
100
150
200
250
300
350
400
C [pF]
V
R
[V]
0
5
10
15
20
100 400 700 1000
Q
c
[nC]
di
F
/dt [A/µs]
25 °C
100 °C
150 °C
175 °C
10
-3
10
-2
10
-1
10
0
10
1
100 200 300 400 500 600
I
R
[µA]
V
R
[V]
0
0.01
0.02
0.05
0.1
0.2
0.5
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
ZthJC [K/W]
t
P
[s]
Rev. 2.2 page 4 2009-08-04
IDD12SG60C
9 Typ. C stored energy
E
C
=f(V
R
)
0
2
4
6
8
10
0 200 400 600
E
c
[µJ]
V
R
[V]
Rev. 2.2 page 5 2009-08-04
IDD12SG60C
PG-TO252-3: Outline
Dimensions in mm/inches
Rev. 2.4 page 6 2009-08-03
P1-P3P4-P6P7-P7

IDD12SG60CXTMA1

Mfr. #:
Buy IDD12SG60CXTMA1
Manufacturer:
Infineon Technologies
Description:
Schottky Diodes & Rectifiers SIC DIODEN
Lifecycle:
New from this manufacturer.
Delivery:
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