MC144110 Technical Data, Rev. 2
4 Freescale Semiconductor
Electrical Specifications
2 Electrical Specifications
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields; however, it is advised that precautions be taken to avoid application of voltage higher than
maximum rated voltages to this high-impedance circuit. For proper operation it is recommended that V
in
and V
out
be constrained to the range V
SS
(V
in
or V
out
) V
DD
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either V
SS
or V
DD
).
Table 1. Maximum Ratings
(Voltages referenced to V
SS
)
Ratings Symbol Value Unit
DC Supply Voltage V
DD
- 0.5 to + 18 V
Input Voltage, All Inputs V
in
- 0.5 to V
DD
+ 0.5 V
DC Input Current, per Pin I ± 10 mA
Power Dissipation (Per Output)
T
A
= 70°C MC144110
MC144111
T
A
= 85°C MC144110
MC144111
P
OH
30
50
10
20
mW
Power Dissipation (Per Package)
T
A
= 70°C MC144110
MC144111
T
A
= 85°C MC144110
MC144111
P
D
100
150
25
50
mW
Storage Temperature Range T
stg
- 65 to + 150 °C
Table 2. Electrical Characteristics
(Voltages referenced to V
SS
, T
A
= 0 to 85°C unless otherwise indicated)
Symbol Parameter Test Conditions V
DD
Min Max Unit
V
IH
High-Level Input Voltage (D
in
, ENB, CLK) 5
10
15
3.0
3.5
4
-
-
-
V
V
IL
Low-Level Input Voltage (D
in
, ENB, CLK) 5
10
15
-
-
-
0.8
0.8
0.8
V
I
OH
High-Level Output Current (D
out
) V
out
= V
DD
- 0.5 V 5 - 200 - µA
I
OL
Low-Level Output Current (D
out
) V
out
= 0.5 V 5 200 - µA
I
DD
Quiescent Supply Current MC144110
MC144111
I
out
= 0 µA 15
15
-
-
12
8
mA
I
in
Input Leakage Current (D
in
, ENB, CLK) V
in
= V
DD
or 0 V 15 - ± 1 µA
V
nonl
Nonlinearity Voltage (Rn Out) See Figure 3 5
10
15
-
-
-
100
200
300
mV
Switching Characteristics
MC144110 Technical Data, Rev. 2
Freescale Semiconductor 5
3 Switching Characteristics
V
step
Step Size (Rn Out) See Figure 4 5
10
15
19
39
58
137
274
411
mV
V
offset
Offset Voltage from V
SS
D
in
= $00, See Figure 3 - - 1 LSB
I
E
Emitter Leakage Current V
Rn Out
= 0 V 15 - 10 µA
h
FE
DC Current Gain I
E
= 0.1 to 10.0 mA
T
A
= 25°C
- 40 - -
V
BE
Base-to-Emitter Voltage Drop I
E
= 1.0 mA - 0.4 0.7 V
Table 3. Switching Characteristics
(Voltages referenced to V
SS
, T
A
= 0 to 85°C, C
L
= 50 pF, Input t
r
= t
f
= 20 ns unless otherwise indicated)
Symbol Parameter V
DD
Min Max Unit
t
wH
Positive Pulse Width, CLK (Figures 5 and 6) 5
10
15
2
1.5
1
-
-
-
µs
t
wL
Negative Pulse Width, CLK (Figure 5 and 6) 5
10
15
5
3.5
2
-
-
-
µs
t
su
Setup Time, ENB to CLK (Figures 5 and 6) 5
10
15
5
3.5
2
-
-
-
µs
t
su
Setup Time, D
in
to CLK (Figures 5 and 6) 5
10
15
1000
750
500
-
-
-
ns
t
h
Hold Time, CLK to ENB (Figures 5 and 6) 5
10
15
5
3.5
2
-
-
-
µs
t
h
Hold Time, CLK to D
in
(Figures 5 and 6) 5
10
15
5
3.5
2
-
-
-
µs
t
r
, t
f
Input Rise and Fall Times 5 - 15 - 2 µs
C
in
Input Capacitance 5 - 15 - 7.5 pF
Table 2. Electrical Characteristics (continued)
(Voltages referenced to V
SS
, T
A
= 0 to 85°C unless otherwise indicated)
Symbol Parameter Test Conditions V
DD
Min Max Unit
MC144110 Technical Data, Rev. 2
6 Freescale Semiconductor
Switching Characteristics
Figure 3. D/A Transfer Function
Figure 4. Definition of Step Size
LINEARITY ERROR (integral linearity). A measure of how straight
a device's transfer function is, it indicates the worst-case deviation of
linearity of the actual transfer function from the best-fit straight line. It
is normally specified in parts of an LSB.
OUTPUT VOLTAGE @ Rn Out, % (V
DD
- V
SS
)
PROGRAM STEP
0
25
75
100
50
015314763
$00 $0F $1F $2F $3F
V
offset
IDEAL
V
nonl
IDEAL
ACTUAL
V
Rn OUT
STEP
SIZE
DIGITAL NUMBER
Step Size
V
DD
64
------------0.75
V
DD
64
------------±=
(For any adjacent pair of digital numbers)

MC144110DW

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
IC HEX SERIAL D/A CONV 20-SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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