2N3906RLRPG Datasheet 2N3906RLRMG, 2N3906RLRPG, 2N3906RLRAG | P1-P3

February, 2010 − Rev. 4

1 Publication Order Number:

2N3906/D

2N3906

General Purpose

Transistors

PNP Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage V

CEO

40 Vdc

Collector − Base Voltage V

CBO

40 Vdc

Emitter − Base Voltage V

EBO

5.0 Vdc

Collector Current − Continuous I

C

200 mAdc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Power Dissipation @ T

A

= 60°C P

D

250 mW

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS (Note 1)

Characteristic

Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

R

q

JA

200 °C/W

Thermal Resistance, Junction−to−Case

R

q

JC

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates Data in addition to JEDEC Requirements.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

COLLECTOR

3

2

BASE

1

EMITTER

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

MARKING DIAGRAM

2N

3906

ALYWG

G

A = Assembly Location

L = Wafer Lot

Y = Year

W = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

1

2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 1

2N3906

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 2) (I

C

= 1.0 mAdc, I

B

= 0) V

(BR)CEO

40 − Vdc

Collector−Base Breakdown Voltage (I

C

= 10 mAdc, I

E

= 0)

V

(BR)CBO

40 − Vdc

Emitter−Base Breakdown Voltage (I

E

= 10 mAdc, I

C

= 0)

V

(BR)EBO

5.0 − Vdc

Base Cutoff Current (V

CE

= 30 Vdc, V

EB

= 3.0 Vdc) I

BL

− 50 nAdc

Collector Cutoff Current (V

CE

= 30 Vdc, V

EB

= 3.0 Vdc) I

CEX

− 50 nAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain (I

C

= 0.1 mAdc, V

CE

= 1.0 Vdc)

(I

C

= 1.0 mAdc, V

CE

= 1.0 Vdc)

(I

C

= 10 mAdc, V

CE

= 1.0 Vdc)

(I

C

= 50 mAdc, V

CE

= 1.0 Vdc)

(I

C

= 100 mAdc, V

CE

= 1.0 Vdc)

h

FE

60

80

100

60

30

−

300

−

Collector−Emitter Saturation Voltage (I

C

= 10 mAdc, I

B

= 1.0 mAdc)

(I

C

= 50 mAdc, I

B

= 5.0 mAdc

V

CE(sat)

−

0.25

0.4

Vdc

Base −Emitter Saturation Voltage (I

C

= 10 mAdc, I

B

= 1.0 mAdc)

(I

C

= 50 mAdc, I

B

= 5.0 mAdc)

V

BE(sat)

0.65

−

0.85

0.95

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (I

C

= 10 mAdc, V

CE

= 20 Vdc, f = 100 MHz) f

T

250 − MHz

Output Capacitance (V

CB

= 5.0 Vdc, I

E

= 0, f = 1.0 MHz) C

obo

− 4.5 pF

Input Capacitance (V

EB

= 0.5 Vdc, I

C

= 0, f = 1.0 MHz) C

ibo

− 10 pF

Input Impedance (I

C

= 1.0 mAdc, V

CE

= 10 Vdc, f = 1.0 kHz) h

ie

2.0 12

kW

Voltage Feedback Ratio (I

C

= 1.0 mAdc, V

CE

= 10 Vdc, f = 1.0 kHz) h

re

0.1 10 X 10

− 4

Small−Signal Current Gain (I

C

= 1.0 mAdc, V

CE

= 10 Vdc, f = 1.0 kHz) h

fe

100 400 −

Output Admittance (I

C

= 1.0 mAdc, V

CE

= 10 Vdc, f = 1.0 kHz) h

oe

3.0 60

mmhos

Noise Figure (I

C

= 100 mAdc, V

CE

= 5.0 Vdc, R

S

= 1.0 kW, f = 1.0 kHz)

NF − 4.0 dB

SWITCHING CHARACTERISTICS

Delay Time

(V

CC

= 3.0 Vdc, V

BE

= 0.5 Vdc,

I

C

= 10 mAdc, I

B1

= 1.0 mAdc)

t

d

− 35 ns

Rise Time t

r

− 35 ns

Storage Time (V

CC

= 3.0 Vdc, I

C

= 10 mAdc, I

B1

= I

B2

= 1.0 mAdc) t

s

− 225 ns

Fall Time (V

CC

= 3.0 Vdc, I

C

= 10 mAdc, I

B1

= I

B2

= 1.0 mAdc) t

f

− 75 ns

2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.

2N3906

http://onsemi.com

3

ORDERING INFORMATION

Device Package Shipping

†

2N3906 TO−92 5000 Units / Bulk

2N3906G TO−92

(Pb−Free)

5000 Units / Bulk

2N3906RL1 TO−92 2000 / Tape & Reel

2N3906RL1G TO−92

(Pb−Free)

2000 / Tape & Reel

2N3906RLRA TO−92 2000 / Tape & Reel

2N3906RLRAG TO−92

(Pb−Free)

2000 / Tape & Reel

2N3906RLRM TO−92 2000 / Tape & Ammo Box

2N3906RLRMG TO−92

(Pb−Free)

2000 / Tape & Ammo Box

2N3906RLRP TO−92 2000 / Tape & Ammo Box

2N3906RLRPG TO−92

(Pb−Free)

2000 / Tape & Ammo Box

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

Figure 1. Delay and Rise Time Equivalent Test Circuit

Figure 2. Storage and Fall Time Equivalent Test Circuit

3 V

275

10 k

1N916

C

S

< 4 pF*

3 V

275

10 k

C

S

< 4 pF*

< 1 ns

+0.5 V

10.6 V

300 ns

DUTY CYCLE = 2%

< 1 ns

+9.1 V

10.9 V

DUTY CYCLE = 2%

t

1

0

10 < t

1

< 500 ms

* Total shunt capacitance of test jig and connectors

2N3906RLRPG

2N3906RLRPG

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