MIXA81WB1200TEH Datasheet MIXA81WB1200TEH | P1-P3

MIXA81WB1200TEH

tentative

6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC

XPT IGBT Module



1/2 3/4 5/6

30/31/32

33/34/35

26/27

24/25

23

28/29

7

22

21

20

10

8/9 11/12

13

18

14/15

19

16

17

Part number

MIXA81WB1200TEH

Backside: isolated

Features / Advantages: Applications: Package:

● Easy paralleling due to the positive temperature

coefficient of the on-state voltage

● Rugged XPT design (Xtreme light Punch Through)

results in:

- short circuit rated for 10 µsec.

- very low gate charge

- low EMI

- square RBSOA @ 3x Ic

● Thin wafer technology combined with the XPT design

results in a competitive low VCE(sat)

● SONIC™ diode

- fast and soft reverse recovery

- low operating forward voltage

● AC motor drives

● Solar inverter

● Medical equipment

● Uninterruptible power supply

● Air-conditioning systems

● Welding equipment

● Switched-mode and resonant-mode

power supplies

● Inductive heating, cookers

● Pumps, Fans

E3-Pack

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Height: 17 mm

● Base plate: Copper

internally DCB isolated

● Advanced power cycling

● Isolation Voltage: V~

3600

RRM

1600

3~

Rectifier

I290

FSM

1200

DAV

V

=

V

A

=

I

CES

1200

Brake

Chopper

I90

CE(sat)

1.8

C25

V

=

V

A

V

=

V

CES

1200

3~

Inverter

I120

CE(sat)

1.8

C25

V

=V

A

V

=

V

IXYS reserves the right to change limits, conditions and dimensions.

20120719Data according to IEC 60747and per semiconductor unless otherwise specified

MIXA81WB1200TEH

tentative

V = V

kA²s

Symbol Definition

Ratings

typ. max.

I

R

V

I

A

V

F

1.23

R 0.45 K/W

R

min.

290

V

RSM

V

100T = 25°C

VJ

T = °C

VJ

mA0.5V = V

R

T = 25°C

VJ

I = A

F

V

T = °C

C

80

P

tot

280 WT = 25°C

C

R K/W

120

1600

max. non-repetitive reverse blocking voltage

reverse current, drain current

forward voltage drop

total power dissipation

Conditions

Unit

T = 25°C

VJ

125

V

F0

V0.85T = °C

VJ

150

r

F

2.7

mΩ

V1.19T = °C

VJ

I = A

F

V

120

I = A

F

240

I = A

F

240

threshold voltage

slope resistance

for power loss calculation only

µA

125

V

RRM

V1600

max. repetitive reverse blocking voltage

T = 25°C

VJ

C

J

26

j

unction capacitance

V = V600 T = 25°Cf = 1 MHz

R

VJ

pF

I

FSM

t = 10 ms; (50 Hz), sine T = 45°C

VJ

max. forward surge current

T = °C

VJ

150

I²t T = 45°C

value for fusing

T = °C150

V = 0 V

R

V = 0 V

R

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

T = °C

VJ

150

1.20

1.30

5.20

5.04

kA

1.02

1.10

7.20

6.98

1600

DAV

d =rectangular ⅓

bridge output current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Rectifier

1700

0.10

IXYS reserves the right to change limits, conditions and dimensions.

20120719Data according to IEC 60747and per semiconductor unless otherwise specified

MIXA81WB1200TEH

tentative

T = 125°C

V

CES

V1200

collector emitter voltage

collector emitter saturation voltage

T = 25°C

collector current

A

90

A

C

VJ

Symbol Definition

Ratings

typ. max.min.Conditions

Unit

60

V

CE(sat)

total power dissipation

290

W

collector emitter leakage current

6.5

V

turn-on delay time

70

ns

t

reverse bias safe operating area

A

V

GES

V±20

V

GEM

max. transient collector gate voltage

T = °C

C

V

P

tot

gate emitter threshold voltage

RBSOA

150

±30

T = 125°C

VJ

V

max. DC gate voltage

I

C25

I

C

T = 25°C

VJ

I = A; V = 15 V

CGE

T = 25°C

VJ

V

GE(th)

I

CES

I = mA; V = V

CGECE

V = V ; V = 0 V

CE CES GE

I

GES

T = 25°C

VJ

gate emitter leakage current

V = ±20 V

GE

2.1

5.95.4

mA

0.1

mA

0.1

nA

500

G(on)

total gate charge

V = V; V = 15 V; I = A

CE

Q

GE C

165

nC

t

E

d(on)

r

d(off)

f

on

off

40

ns

250

ns

100

ns

4.5

mJ

5.5

mJ

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load

V = V; I = A

V = ±15 V; R = Ω

CE

C

GE G

V = ±15 V; R = Ω

GE G

V = V

CEK

1200

short circuit safe operating area

µs

SCSOA

10T = 125°C

VJ

V = V; V = ±15 V

CE GE

short circuit duration

t

short circuit current

I

SC

R = Ω; non-repetitive

G

200

A

R

thJC

thermal resistance junction to case

K/W

V

RRM

V1200

max. repetitive reverse voltage

T = 25°C

VJ

T = 25°C

forward current

A

44

A

C

29

T = °C

C

I

F25

I

F

T = 25°C

forward voltage

V

2.20

V

VJ

1.90T = 125°C

VJ

V

F

I = A

F

T = 25°C

reverse current

mA

0.1

mA

VJ

2T = 125°C

VJ

I

R R RRM

T = 125°C

VJ

Q

I

t

rr

RM

rr

3.5

µC

30

A

350

ns

reverse recovery charge

max. reverse recovery current

reverse recovery time

V =

-di /dt = A/µs

I = A

F

E

rec

0.9

mJ

reverse recovery energy

R

thJC

thermal resistance junction to case

1.2

K/W

V = V

T = 25°C

C

T = 25°C

VJ

T = 125°C

VJ

55

2

55

30

15

600

900

600

I

CM

1.8

R

thCH

thermal resistance case to heatsink

0.43

K/W

R

thCH

thermal resistance case to heatsink

K/W

Brake IGBT

Brake Diode

600 V

80

0.10

IXYS reserves the right to change limits, conditions and dimensions.

20120719Data according to IEC 60747and per semiconductor unless otherwise specified

MIXA81WB1200TEH

MIXA81WB1200TEH

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