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MIXA81WB1200TEH

P1-P3P4-P6P7-P9P10-P11
MIXA81WB1200TEH
tentative
11.010.0100.0
0.01
0.1
1
t[s]
Z
thJC
[K/W]
0.0 0.5 1.0 1.5 2.0
0
50
100
150
200
I
F
[A]
V
F
[V]
T
VJ
= 125°C
T
VJ
= 25°C
Fig. 1 Forward current versus
voltagedropperdiode
Fig. 2 Surge overload current
Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation versus direct output current
and ambient temperature, sine 180°
Fig. 5 Max. forward current
versus case temperature
Fig. 6 Transient thermal impedance junction to case
R
ii
0.102 0.0028
0.0776 0.07
0.1768 0.036
0.1136 0.07
Rectifier
IXYS reserves the right to change limits, conditions and dimensions.
20120719Data according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
MIXA81WB1200TEH
tentative
0123
0
20
40
60
80
100
0 20 40 60 80 100
0
2
4
6
8
10
01234
0
20
40
60
80
100
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9V
11 V
681012
0
20
40
60
80
100
0 40 80 120 160 200
0
5
10
15
20
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
13 V
12 16 20 24 28 32
4.0
4.5
5.0
5.5
6.0
E
[mJ]
E
off
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE
=15V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy
versus collector current
E
on
Fig. 6 Typ. switching energy
versus gate resistance
R
G
[ ]
E
[mJ]
I
C
[A]
E
on
E
off
V
GE
=15V
T
VJ
=125°C
0.001 0.01 0.1 1 10
0.01
0.1
1
t
p
[s]
Z
thJC
[K/W]
Fi
g
.7 T
y
p
. transient thermal im
p
edance
I
C
= 50A
V
CE
=600V
R
G
= 15
V
CE
=600 V
V
GE
= ±15 V
T
VJ
=125°C
I
C
=50 A
V
CE
= 600 V
V
GE
=±15V
T
VJ
=125°C
Brake IGBT
IXYS reserves the right to change limits, conditions and dimensions.
20120719Data according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
MIXA81WB1200TEH
tentative
400 600 800 1000
1
2
3
4
5
6
0123
0
20
40
60
Q
rr
[μC]
I
F
[A]
V
F
[V]
di
F
/dt [A/μs]
T
VJ
=125°C
T
VJ
= 25°C
T
VJ
=125°C
V
R
=600 V
15 A
30 A
60 A
Fig. 1 Typ. Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
rr
versus di/dt
400 600 800 1000
0
10
20
30
40
50
60
70
I
RM
[A]
di
F
/dt [A/μs]
T
VJ
=125°C
V
R
= 600 V
60 A
15 A
30 A
Fig.3 Typ. peak reverse current
I
RM
versus di/dt
400 600 800 1000
0
100
200
300
400
500
600
700
t
rr
[ns]
di
F
/dt [A/μs]
15 A
60 A
30 A
T
VJ
= 125°C
V
R
= 600 V
Fig. 5 Typ. recovery time
t
rr
versus di/dt
Fig. 6 Typ. recovery energy
E
rec
versus di/dt
400 600 800 1000
0.0
0.5
1.0
1.5
2.0
E
rec
[mJ]
di
F
/dt [A/μs]
T
VJ
= 125°C
V
R
=600 V
60 A
15 A
30 A
0.001 0.01 0.1 1 10
0.01
0.1
1
t
p
[s]
Z
thJC
[K/W]
Fig. 7 Typ. transient thermal impedance
Fig. 4 Dynamic parameters
Q
r
,I
RM
versus T
VJ
2
Brake Diode
IXYS reserves the right to change limits, conditions and dimensions.
20120719Data according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
P1-P3P4-P6P7-P9P10-P11

MIXA81WB1200TEH

Mfr. #:
Buy MIXA81WB1200TEH
Manufacturer:
Littelfuse
Description:
IGBT Modules Six Pack SPT IGBT
Lifecycle:
New from this manufacturer.
Delivery:
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